Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL220567

CC(C)(C)c1ccccc1[S+](c1ccccc1C(C)(C)C)c1ccccc1C(C)(C)C.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.44

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Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 4/20 0.44
GPR3 P46089 2/20 0.43
ALDH1A1 P00352 1/20 0.39
TSHR P16473 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
ACHE P22303 7/20 0.38
KCNH2 Q12809 6/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL9179773 0.92 HSD11B1 (0.40) HSD11B1GPR3ALDH1A1TSHRTDP1
Trifluoromethanesulfonic Acid SCHEMBL1813934 0.90 HSD11B1 (0.40) HSD11B1GPR3ALDH1A1TSHRTDP1
SCHEMBL7896348 0.87 ALDH1A1 (0.39) HSD11B1ALDH1A1TSHRTDP1
SCHEMBL30897218 0.84 HSD11B1 (0.39) HSD11B1
SCHEMBL2634848 0.84 HSD11B1 (0.39) HSD11B1
SCHEMBL31627575 0.83 CA2 (0.38) HSD11B1
SCHEMBL956713 0.83 CA2 (0.38) HSD11B1
SCHEMBL31290711 0.81 ALDH1A1 (0.39) HSD11B1ALDH1A1TSHRTDP1
SCHEMBL2634259 0.81 ALDH1A1 (0.39) HSD11B1ALDH1A1TSHRTDP1
SCHEMBL5412875 0.80 NR1I2 (0.35) HSD11B1ALDH1A1TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7300741-B2 For printing features having a dimension of about 30 nm or less; resist is developable in an aqueous alkaline developer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-27 US claimed
US-20070248908-A1 ADVANCED CHEMICALLY AMPLIFIED RESIST FOR SUB 30NM DENSE FEATURE RESOLUTION INTERNATIONAL BUSINESS MACHINES (US) 2007-10-25 US claimed
EP-0543762-B1 Dry developable photoresist compositions and method for use thereof IBM (US) 2000-02-16 EP claimed
US-5322765-A Dry developable photoresist compositions and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-06-21 US claimed
EP-0543762-A1 Dry developable photoresist compositions and method for use thereof International Business Machines Corporation (US) 1993-05-26 EP claimed
EP-2427801-B1 FUNCTIONALIZED PERFLUOROPOLYETHER MATERIAL AS A HYDROPHOBIC COATING HEWLETT PACKARD DEVELOPMENT CO LP (US) 2017-08-09 EP disclosed
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-8614283-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2013-12-24 US disclosed
US-8580481-B2 Resist polymer and resist composition MITSUBISHI RAYON CO., LTD. (JP) 2013-11-12 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-8512935-B2 Functionalized perfluoropolyether material as a hydrophobic coating HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) 2013-08-20 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-5332648-A Alklali soluble phenolic polymer, cyclic ester or sulfonate which converts to the acid, an onium salt which generates an an acid on exposure to radiation KABUSHIKI KAISHA TOSHIBA (JP) 1994-07-26 US disclosed
US-5326675-A Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer KABUSHIKI KAISHA TOSHIBA (JP) 1994-07-05 US disclosed
US-5322765-A Dry developable photoresist compositions and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-06-21 US disclosed
US-5296332-A Crosslinkable aqueous developable photoresist compositions and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-03-22 US disclosed
EP-0543762-A1 Dry developable photoresist compositions and method for use thereof International Business Machines Corporation (US) 1993-05-26 EP disclosed
EP-0543761-A1 Crosslinkable aqueous developable photoresist compositions and method for use thereof International Business Machines Corporation (US) 1993-05-26 EP disclosed
US-5091282-A Comprising a 4-oxo-p-dioxin or a C5-6 carbcyclic fused derivative and a phenolic resin or a hydroxyl-containing polysiloxane or -silane; photoresists using short wavelengths of UV; sharpness KABUSHIKI KAISHA TOSHIBA (JP) 1992-02-25 US disclosed
EP-0396254-A2 Photosensitive composition and pattern formation method using the same KABUSHIKI KAISHA TOSHIBA (JP) 1990-11-07 EP disclosed