SCHEMBL22335854

SCHEMBL22335854

CC(c1ccc(O)cc1)(c1ccc(O)cc1)c1ccc(C(C)(c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)cc1

nearest known ligand 0.80

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 12/20 0.80
ESR2 Q92731 11/20 0.80
CYP3A4 P08684 4/20 0.68
LMNA P02545 2/20 0.68
TYR P14679 2/20 0.68
HPGD P15428 2/20 0.68
HSD17B10 Q99714 2/20 0.68
AR P10275 1/20 0.68
TSHR P16473 1/20 0.68
SLC6A2 P23975 1/20 0.68
SLC6A4 P31645 1/20 0.68
HTR6 P50406 1/20 0.68
ESRRG P62508 1/20 0.68
SLC6A3 Q01959 1/20 0.68
MEN1 O00255 2/20 0.61
KMT2A Q03164 2/20 0.61
ALDH1A1 P00352 3/20 0.56
SHBG P04278 1/20 0.54
KDM4E B2RXH2 1/20 0.50
NPC1 O15118 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4063477 1.00 ESR1 (0.80) ESR1ESR2CYP3A4LMNATYR
SCHEMBL18750 1.00 ESR1 (0.80) ESR1ESR2CYP3A4LMNATYR
SCHEMBL6761025 0.97 ESR1 (0.76) ESR1ESR2CYP3A4LMNATYR
SCHEMBL1456440 0.92 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR
SCHEMBL22336149 0.92 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR
SCHEMBL12004872 0.92 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR
SCHEMBL10772499 0.92 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR
SCHEMBL35973 0.92 ESR1 (0.84) ESR1ESR2CYP3A4LMNATYR
SCHEMBL9652258 0.92 LMNA (0.84) ESR1ESR2CYP3A4LMNATYR
SCHEMBL8373998 0.92 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250138416-A1 RESIST COMPOSITIONS, METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME AND MULTILAYERED STRUCTURES FORMED USING THE SAME INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (KR) 2025-05-01 US disclosed
US-11720022-B2 Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US disclosed
US-11720022-B2 Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US disclosed
US-20200257200-A1 RESIST COMPOUND, METHOD OF FORMING PATTERN USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME lnha University Research and Business Foundation (KR) 2020-08-13 US disclosed