SCHEMBL22336149

SCHEMBL22336149

CC(c1ccc(O)cc1)(c1ccc(O)cc1)c1ccc(C(c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)(c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)cc1

nearest known ligand 0.70

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 11/20 0.70
ESR2 Q92731 10/20 0.70
LMNA P02545 2/20 0.67
TYR P14679 2/20 0.67
CYP3A4 P08684 3/20 0.59
HPGD P15428 3/20 0.59
HSD17B10 Q99714 3/20 0.59
AR P10275 1/20 0.59
TSHR P16473 1/20 0.59
SLC6A2 P23975 1/20 0.59
SLC6A4 P31645 1/20 0.59
HTR6 P50406 1/20 0.59
ESRRG P62508 1/20 0.59
SLC6A3 Q01959 1/20 0.59
MEN1 O00255 2/20 0.55
KMT2A Q03164 2/20 0.55
ALDH1A1 P00352 3/20 0.50
SHBG P04278 1/20 0.48
UQCRB P14927 1/20 0.44
ALOX15 P16050 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4063477 0.92 ESR1 (0.80) ESR1ESR2LMNATYRCYP3A4
SCHEMBL18750 0.92 ESR1 (0.80) ESR1ESR2LMNATYRCYP3A4
SCHEMBL22335854 0.92 ESR1 (0.80) ESR1ESR2LMNATYRCYP3A4
SCHEMBL22336095 0.91 ESR1 (0.87) ESR1ESR2LMNATYRCYP3A4
SCHEMBL5861516 0.91 ESR1 (0.87) ESR1ESR2LMNATYRCYP3A4
SCHEMBL9652258 0.90 LMNA (0.84) ESR1ESR2LMNATYRCYP3A4
SCHEMBL6761025 0.89 ESR1 (0.76) ESR1ESR2LMNATYRCYP3A4
SCHEMBL12959673 0.86 LMNA (0.89) ESR1ESR2LMNATYRCYP3A4
SCHEMBL237273 0.86 LMNA (0.67) ESR1ESR2LMNATYRCYP3A4
SCHEMBL13416164 0.84 ESR1 (0.84) ESR1ESR2LMNATYRCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11720022-B2 Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US disclosed
US-11720022-B2 Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US disclosed
US-20200257200-A1 RESIST COMPOUND, METHOD OF FORMING PATTERN USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME lnha University Research and Business Foundation (KR) 2020-08-13 US disclosed