SCHEMBL22336095

SCHEMBL22336095

CC(c1ccc(O)cc1)(c1ccc(O)cc1)c1ccc(C(c2ccccc2)(c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)c2ccc(C(C)(c3ccc(O)cc3)c3ccc(O)cc3)cc2)cc1

nearest known ligand 0.87

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 10/20 0.87
ESR2 Q92731 10/20 0.87
CYP3A4 P08684 3/20 0.65
ALDH1A1 P00352 3/20 0.65
LMNA P02545 1/20 0.56
TYR P14679 1/20 0.56
AR P10275 1/20 0.50
HPGD P15428 1/20 0.50
TSHR P16473 1/20 0.50
SLC6A2 P23975 1/20 0.50
SLC6A4 P31645 1/20 0.50
HTR6 P50406 1/20 0.50
ESRRG P62508 1/20 0.50
SLC6A3 Q01959 1/20 0.50
HSD17B10 Q99714 1/20 0.50
MEN1 O00255 1/20 0.48
KMT2A Q03164 1/20 0.48
SHBG P04278 1/20 0.42
CA12 O43570 1/20 0.42
CA1 P00915 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5861516 1.00 ESR1 (0.87) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL27277 0.93 ESR1 (1.00) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL8031149 0.93 ESR1 (1.00) ESR1ESR2CYP3A4ALDH1A1LMNA
Methane SCHEMBL16667289 0.91 ESR1 (0.95) ESR1ESR2CYP3A4ALDH1A1LMNA
Phenol SCHEMBL29851136 0.91 ESR1 (0.95) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL22336149 0.91 ESR1 (0.70) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL20520408 0.89 LMNA (0.73) ESR1ESR2CYP3A4ALDH1A1LMNA
Phenol SCHEMBL8987629 0.89 ESR1 (0.91) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL723515 0.89 ESR1 (0.65) ESR1ESR2CYP3A4ALDH1A1LMNA
SCHEMBL11591869 0.89 ESR1 (0.65) ESR1ESR2CYP3A4ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11720022-B2 Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US disclosed
US-20200257200-A1 RESIST COMPOUND, METHOD OF FORMING PATTERN USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME lnha University Research and Business Foundation (KR) 2020-08-13 US disclosed