SCHEMBL2326430

SCHEMBL2326430

COCCN(CCC#N)CCC(=O)O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.39
LCK P06239 1/20 0.34
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
HPGD P15428 2/20 0.33
CASP1 P29466 1/20 0.33
TSHR P16473 2/20 0.32
HSD17B10 Q99714 2/20 0.32
BLM P54132 1/20 0.32
PMP22 Q01453 1/20 0.32
USP2 O75604 1/20 0.31
KDM5A P29375 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
LMNA P02545 1/20 0.31
CCR6 P51684 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5619133 0.90 ALDH1A1 (0.44) ALDH1A1LCKCYP1A2CYP2D6CYP2C9
SCHEMBL64377 0.89 MEN1 (0.42) ALDH1A1LCKCYP1A2CYP3A4CYP2D6
SCHEMBL4796638 0.86 LCK (0.43) ALDH1A1LCKCYP2C19HPGDCASP1
SCHEMBL5067890 0.86 ALDH1A1 (0.50) ALDH1A1TSHRHSD17B10BLMPMP22
SCHEMBL65789 0.84 LCK (0.45) ALDH1A1LCKCASP1MEN1KMT2A
SCHEMBL64618 0.84 LCK (0.45) ALDH1A1LCKCASP1MEN1KMT2A
SCHEMBL14012817 0.79 ALDH1A1 (0.44) ALDH1A1TSHRHSD17B10BLMPMP22
SCHEMBL5701701 0.79 LCK (0.38) ALDH1A1LCKHPGDHSD17B10USP2
SCHEMBL65126 0.79 MEN1 (0.34) BLMMEN1KMT2A
SCHEMBL5619022 0.75 ALDH1A1 (0.46) ALDH1A1CYP1A2TSHRHSD17B10BLM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1764647-B1 Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same FUJIFILM CORP (JP) 2011-08-17 EP disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed