Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.40 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | SLC1A3 | P43003 | 2/20 | 0.30 |
| ▸ | SLC1A2 | P43004 | 2/20 | 0.30 |
| ▸ | SLC1A1 | P43005 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5146840 | 0.82 | MAPT (0.32) | ALDH1A1RXFP1MAPTRAB9A | |
| SCHEMBL10028356 | 0.76 | MAPT (0.40) | ALDH1A1LMNAMAPTRAB9A | |
| SCHEMBL19103492 | 0.73 | — | — | |
| SCHEMBL19117255 | 0.73 | SLC1A3 (0.36) | ALDH1A1RXFP1LMNASLC1A3SLC1A2 | |
| SCHEMBL74626 | 0.73 | SLC6A3 (0.39) | ALDH1A1MAPT | |
| SCHEMBL73848 | 0.71 | SLC6A3 (0.41) | ALDH1A1LMNAMAPT | |
| SCHEMBL6209667 | 0.71 | SMN1; SMN2 (0.44) | ALDH1A1MAPTRAB9A | |
| SCHEMBL6827336 | 0.70 | — | — | |
| SCHEMBL31674467 | 0.70 | — | — | |
| SCHEMBL11314302 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8808975-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| EP-1764647-B1 | Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same | FUJIFILM CORP (JP) | 2011-08-17 | — | — | EP | disclosed |
| US-20100310991-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| US-7803511-B2 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJIFILM CORPORATION (JP) | 2010-09-28 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| EP-1764647-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2007-03-21 | — | — | EP | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20050186505-A1 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |