SCHEMBL74626

SCHEMBL74626

CC(C(=O)OCC#N)N1CCCC1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A3 Q01959 10/20 0.39
SLC6A2 P23975 9/20 0.39
CHRNB4 P30926 6/20 0.39
CHRNA3 P32297 6/20 0.39
CHRNB2 P17787 5/20 0.39
CHRNA4 P43681 5/20 0.39
CHRNA1 P02708 4/20 0.39
CHRNG P07510 4/20 0.39
CHRNB1 P11230 4/20 0.39
CHRND Q07001 4/20 0.39
SLC6A4 P31645 4/20 0.35
ALDH1A1 P00352 2/20 0.35
KDM4E B2RXH2 1/20 0.35
GAA P10253 1/20 0.35
ATM Q13315 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
MAOB P27338 1/20 0.33
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL73848 0.98 SLC6A3 (0.41) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL72913 0.85 ALDH1A1 (0.43) ALDH1A1GAAKMT2AMAPTMAPK1
SCHEMBL73898 0.83 MAPT (0.35) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL72629 0.81 MAPT (0.38) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL4089646 0.77 ALDH1A1 (0.43) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL28201107 0.77 ALDH1A1 (0.43) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL2961890 0.76 ALDH1A1 (0.42) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL3898658 0.73 ALDH1A1 (0.43) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2
SCHEMBL2331205 0.73 ALDH1A1 (0.40) ALDH1A1MAPT
SCHEMBL5627160 0.72 ALDH1A1 (0.46) SLC6A3SLC6A2CHRNB4CHRNA3CHRNB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9410951-B2 Method for producing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
US-8808975-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8586282-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-19 US disclosed
US-20120183893-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20070185226-A1 NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-09 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050186505-A1 Positive resist composition for immersion exposure and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed