SCHEMBL234362

SCHEMBL234362

NC(=O)N(COC1CCCCC1)COC1CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ALOX5 P09917 4/20 0.42
▸ EPHX1 P07099 3/20 0.36
▸ NPC1 O15118 1/20 0.35
▸ CA1 P00915 1/20 0.34
▸ CA2 P00918 1/20 0.34
▸ CYP2C19 P33261 1/20 0.34
▸ NAAA Q02083 3/20 0.33
▸ HTT P42858 1/20 0.33
▸ PARP10 Q53GL7 2/20 0.31
▸ CES2 O00748 1/20 0.31
▸ CES1 P23141 1/20 0.31
▸ CYP19A1 P11511 1/20 0.31
▸ PARP15 Q460N3 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL237302 0.98 ALOX5 (0.41) ALOX5EPHX1NPC1CA1CA2
SCHEMBL15738867 0.80 ALOX5 (0.40) ALOX5EPHX1CA1CA2CYP2C19
SCHEMBL29991650 0.79 EPHX1 (0.41) EPHX1NPC1CYP2C19NAAAHTT
SCHEMBL12599011 0.74 HTT (0.39) ALOX5EPHX1NPC1CA1CA2
SCHEMBL22154807 0.74 HTT (0.39) ALOX5EPHX1NPC1CA1CA2
SCHEMBL6120762 0.71 HTT (0.40) ALOX5EPHX1NPC1CA1CA2
SCHEMBL7760755 0.70 ALOX5 (0.67) ALOX5EPHX1PARP10PARP15
SCHEMBL16244272 0.69 NPC1 (0.42) ALOX5EPHX1NPC1CA1CA2
Urea SCHEMBL13684303 0.69 EPHX1 (0.35) ALOX5EPHX1NPC1CA1CA2
SCHEMBL1899578 0.68 EPHX1 (0.34) ALOX5EPHX1NPC1CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260147276-A1 NEGATIVE RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2026-05-28 — — US disclosed
US-20250370338-A1 NEGATIVE RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-12-04 — — US disclosed
US-10444627-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2019-10-15 — — US disclosed
US-20180120706-A1 PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT FUJIFILM CORPORATION (JP) 2018-05-03 — — US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 — — US disclosed
US-9664827-B2 Colored composition, method of producing color filter using the same, color filter and solid-state imaging device FUJIFILM CORPORATION (JP) 2017-05-30 — — US disclosed
US-9632222-B2 Method for manufacturing a color filter, color filter and solid-state imaging device FUJIFILM CORPORATION (JP) 2017-04-25 — — US disclosed
US-20160349620-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2016-12-01 — — US disclosed
US-9507257-B2 Method for manufacturing a color filter, color filter and solid-state imaging device FUJIFILM CORPORATION (JP) 2016-11-29 — — US disclosed
US-9482958-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2016-11-01 — — US disclosed
US-20120028196-A1 METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-02-02 — — US disclosed
US-20120003591-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110287234-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2011-11-24 — — US disclosed
EP-2384458-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM Corporation (JP) 2011-11-09 — — EP disclosed
WO-2011132764-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-10-27 — — WO disclosed
WO-2011102546-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-08-25 — — WO disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 — — WO disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 — — WO disclosed
WO-2011043481-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-04-14 — — WO disclosed
WO-2010087516-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-08-05 — — WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260147276-A1 NEGATIVE RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RFC1, RFC2, RFC4 ALOX5 814/4885EPHX1 586/4885NPC1 4472/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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