⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481468 | 0.67 | — | — | |
| SCHEMBL21933252 | 0.63 | — | — | |
| SCHEMBL27860904 | 0.63 | — | — | |
| SCHEMBL20240849 | 0.60 | — | — | |
| SCHEMBL27941492 | 0.60 | — | — | |
| SCHEMBL296997 | 0.59 | — | — | |
| SCHEMBL208611 | 0.59 | — | — | |
| SCHEMBL1284795 | 0.59 | — | — | |
| SCHEMBL15611834 | 0.59 | — | — | |
| SCHEMBL512266 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 478 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025229081-A1 | ORGANOAMINO-CARBOSILANES AND METHODS FOR DEPOSITING SILICONCONTAINING FILMS USING SAME | MERCK PATENT GMBH (DE) | 2025-11-06 | — | — | WO | claimed |
| US-20250270694-A1 | PROCESSING APPARATUS, PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2025-08-28 | — | — | US | claimed |
| US-20250270096-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILM | VERSUM MAT US LLC (US) | 2025-08-28 | — | — | US | claimed |
| US-12297115-B2 | High temperature atomic layer deposition of silicon-containing film | VERSUM MATERIALS US, LLC (US) | 2025-05-13 | — | — | US | claimed |
| US-12281386-B2 | Method of processing substrate for forming film containing silicon by supplying precursor containing Si—C bonds | Kokusai Electric Corporation (JP) | 2025-04-22 | — | — | US | claimed |
| US-20230357926-A1 | SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM FOR FORMING CONTAINING SILICON | Kokusai Electric Corporation (JP) | 2023-11-09 | — | — | US | claimed |
| US-11746416-B2 | Method of processing substrate and manufacturing semiconductor device by forming film containing silicon | Kokusai Electric Corporation (JP) | 2023-09-05 | — | — | US | claimed |
| US-20190189432-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2019-06-20 | — | — | US | claimed |
| EP-2228465-B1 | Methods for making dielectric films comprising silicon | VERSUM MAT US LLC (US) | 2018-05-23 | — | — | EP | claimed |
| US-8821986-B2 | Activated silicon precursors for low temperature deposition | APPLIED MATERIALS, INC. (US) | 2014-09-02 | — | — | US | claimed |
| EP-1305823-A4 | PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER | KOREA RES INST CHEM TECH (KR) | 2006-07-05 | — | — | EP | claimed |
| US-20060008661-A1 | Manufacturable low-temperature silicon carbide deposition technology | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE | 2006-01-12 | — | — | US | claimed |
| WO-2005057630-A2 | MANUFACTURABLE LOW-TEMPERATURE SILICON CARBIDE DEPOSITION TECHNOLOGY | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2005-06-23 | — | — | WO | claimed |
| US-6800133-B1 | Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 2004-10-05 | — | — | US | claimed |
| EP-1305823-A1 | PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER | Korea Research Institute of Chemical Technology (KR) | 2003-05-02 | — | — | EP | claimed |
| WO-2002013246-A1 | PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 2002-02-14 | — | — | WO | claimed |
| EP-0723600-B1 | PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS | KOREA RES INST CHEM TECH (KR) | 1999-07-07 | — | — | EP | claimed |
| EP-0723600-A1 | PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 1996-07-31 | — | — | EP | claimed |
| WO-1995010638-A1 | PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 1995-04-20 | — | — | WO | claimed |
| US-5075477-A | Direct synthesis of methylchlorosilaakanes | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 1991-12-24 | — | — | US | claimed |