SCHEMBL23587443

SCHEMBL23587443

Cc1cc(C2c3c(ccc4ccc(O)cc34)Oc3ccc4ccc(OC(=O)OC(C)(C)C)cc4c32)cc(C)c1O

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.37
CA2 P00918 1/20 0.37
KMT2A Q03164 6/20 0.36
MEN1 O00255 5/20 0.36
ELANE P08246 1/20 0.35
KDM1A O60341 1/20 0.35
ALDH1A1 P00352 2/20 0.35
FGB P02675 1/20 0.35
HPGD P15428 1/20 0.35
TNNI3 P19429 1/20 0.35
TNNT2 P45379 1/20 0.35
RECQL P46063 1/20 0.35
TNNC1 P63316 1/20 0.35
LMNA P02545 1/20 0.34
NQO2 P16083 1/20 0.33
NPC1 O15118 1/20 0.32
CASP3 P42574 1/20 0.32
SENP8 Q96LD8 1/20 0.32
SENP7 Q9BQF6 1/20 0.32
SENP6 Q9GZR1 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23587441 0.90 NPSR1 (0.37) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18615297 0.89 MEN1 (0.39) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18613101 0.83 MEN1 (0.38) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL21755804 0.83 MEN1 (0.45) NPSR1KMT2AMEN1ALDH1A1FGB
SCHEMBL23587442 0.81 CA2 (0.33) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL23960175 0.81 NPSR1 (0.38) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18615172 0.81 NPSR1 (0.42) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18615296 0.80 MEN1 (0.37) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18615248 0.78 NPSR1 (0.42) NPSR1CA2KMT2AMEN1ELANE
SCHEMBL18613106 0.78 ELANE (0.38) NPSR1CA2KMT2AELANEKDM1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3842491-A1 COMPOUND, COMPOSITION CONTAINING THE SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-30 EP disclosed