SCHEMBL238490

SCHEMBL238490

[O]CC(C1CCCCCCCCC1)(C1CCCCCCCCC1)C1CCCCCCCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4639751 0.74 SMN1; SMN2 (0.39)
SCHEMBL11742465 0.73 KEAP1 (0.31)
SCHEMBL238491 0.71
SCHEMBL29082882 0.71
SCHEMBL3000331 0.71 CYP1A2 (0.40)
SCHEMBL855253 0.71
SCHEMBL15914733 0.71
SCHEMBL29010804 0.71
SCHEMBL8577284 0.69 CYP1A2 (0.30)
SCHEMBL31352036 0.69 ALDH1A1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 229 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2550562-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-21 EP disclosed
EP-2539769-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-07 EP disclosed
CN-105051610-B Pattern forming method and method for manufacturing electronic component 富士胶片株式会社 2020-02-14 CN disclosed
EP-2681623-B1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORP (JP) 2019-07-10 EP disclosed
US-20190196328-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2019-06-27 US disclosed
EP-2434343-B1 Resist composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORP (JP) 2019-05-15 EP disclosed
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2019-04-02 US disclosed
US-10126651-B2 Pattern forming method, and, method for producing electronic device and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-11-13 US disclosed
US-10126653-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2018-11-13 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 WO disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 WO disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
WO-2011043481-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-04-14 WO disclosed
WO-2011024734-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-03 WO disclosed
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-01-13 US disclosed
WO-2010140709-A1 METHOD OF FORMING PATTERN USING ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN FUJIFILM CORPORATION (JP) 2010-12-09 WO disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed
US-20100248136-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
WO-2010061977-A2 PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-06-03 WO disclosed