SCHEMBL2429907

SCHEMBL2429907

[Cu+2].[Cu+2].[Cu+2].[N-3].[N-3].[SiH4].[SiH4].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3290231 1.00
SCHEMBL51738 0.82
SCHEMBL1537999 0.67
SCHEMBL2443636 0.67
Water SCHEMBL1499971 0.67
SCHEMBL890500 0.67
SCHEMBL7897303 0.67
SCHEMBL4130934 0.67
SCHEMBL5013113 0.67
SCHEMBL975457 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8022548-B2 Method for fabricating conducting plates for a high-Q MIM capacitor ATMEL CORPORATION (US) 2011-09-20 US disclosed
US-7776705-B2 Method for fabricating a thick copper line and copper inductor resulting therefrom ATMEL CORPORATION (US) 2010-08-17 US disclosed
US-20100019349-A1 METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR ATMEL CORPORATION (US) 2010-01-28 US disclosed
US-7601604-B2 Method for fabricating conducting plates for a high-Q MIM capacitor ATMEL CORPORATION (US) 2009-10-13 US disclosed
US-20080089007-A1 Method for fabricating conducting plates for a high-Q MIM capacitor ATMEL CORPORATION (US) 2008-04-17 US disclosed
WO-2008045672-A2 METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR ATMEL CORPORATION (US) 2008-04-17 WO disclosed
US-20080057658-A1 METHOD FOR FABRICATING A THICK COPPER LINE AND COPPER INDUCTOR RESULTING THEREFROM ATMEL CORPORATION (US) 2008-03-06 US disclosed