Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | LMNA | P02545 | 2/20 | 0.42 |
| ▸ | TYR | P14679 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 5/20 | 0.38 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.38 |
| ▸ | KCNK9 | Q9NPC2 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.37 |
| ▸ | ESR1 | P03372 | 2/20 | 0.37 |
| ▸ | ESR2 | Q92731 | 2/20 | 0.37 |
| ▸ | KIF11 | P52732 | 2/20 | 0.37 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.37 |
| ▸ | NPC1 | O15118 | 3/20 | 0.36 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.36 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.36 |
| ▸ | CASP3 | P42574 | 1/20 | 0.36 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.36 |
| ▸ | RELA | Q04206 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL107752 | 1.00 | TSHR (0.44) | TSHRLMNATYRL3MBTL1MAPT | |
| Bromide SCHEMBL482438 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Hydrochloric Acid SCHEMBL3748986 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Bromide SCHEMBL3132525 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Bromide SCHEMBL3742452 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Ethane SCHEMBL4602786 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Iodide SCHEMBL5461188 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Ethane SCHEMBL2439613 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Water SCHEMBL7702884 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT | |
| Methane SCHEMBL2436367 | 0.98 | TSHR (0.42) | TSHRLMNATYRL3MBTL1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 949 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | claimed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20050048395-A1 | Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2005-03-03 | — | — | US | disclosed |
| US-20040229162-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-18 | — | — | US | disclosed |
| US-6713612-B2 | Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-30 | — | — | US | disclosed |
| US-6692893-B2 | ONIUM SALTS OF ARYLSULFONYLOXYNAPHTHALENESULFONATE ANIONS WITH IODONIUM OR SULFONIUM CATIONS; USE IN DEEP ULTRAVIOLET LITHOGRAPHY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-04 | — | — | US | disclosed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | disclosed |
| US-6416928-B1 | HALOGENONIUM OR SULFONIUM SALTS OF SULFONATED DIPHENYLALKANE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-07-09 | — | — | US | disclosed |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-20 | — | — | US | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | TSHR 847/4885LMNA 4690/4885TYR 2234/4885 |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, DNMT3A, PIM3 | TSHR 2491/4885LMNA 815/4885TYR 195/4885 |
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | TSHR 2852/4885LMNA 454/4885TYR 2516/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | TSHR 1113/4885LMNA 3803/4885TYR 2751/4885 |
| US-20020077493-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | ABL1, PI4K2B, FES | TSHR 1859/4885LMNA 2199/4885TYR 5/4885 |
| US-20020076643-A1 | Novel onium salts, photoacid generators, resist compositions, and patterning process | PNN, PI4K2B, PI4K2A | TSHR 1787/4885LMNA 1536/4885TYR 5/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | TSHR 3144/4885LMNA 143/4885TYR 4110/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.