SCHEMBL2472954

SCHEMBL2472954

CN(C)N=Nc1cccc(N=NN(C)C)c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.46
TDP1 Q9NUW8 3/20 0.46
KDM4E B2RXH2 2/20 0.46
PKM P14618 2/20 0.46
LMNA P02545 1/20 0.44
NPC1 O15118 5/20 0.42
RAB9A P51151 5/20 0.42
KMT2A Q03164 4/20 0.42
MEN1 O00255 3/20 0.42
CASP3 P42574 2/20 0.42
SENP8 Q96LD8 2/20 0.42
SENP7 Q9BQF6 2/20 0.42
SENP6 Q9GZR1 2/20 0.42
NSD2 O96028 1/20 0.42
ALDH1A1 P00352 3/20 0.42
MAPK1 P28482 2/20 0.42
EGFR P00533 5/20 0.41
NOS1 P29475 1/20 0.39
TSHR P16473 1/20 0.37
HSD17B10 Q99714 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2472953 1.00 MAPT (0.46) MAPTTDP1KDM4EPKMLMNA
SCHEMBL2475262 0.84 LMNA (0.45) MAPTTDP1KDM4EPKMLMNA
SCHEMBL2475261 0.84 LMNA (0.45) MAPTTDP1KDM4EPKMLMNA
SCHEMBL2109239 0.82 ALDH1A1 (0.55) MAPTTDP1KDM4EPKMLMNA
SCHEMBL187587 0.82 ALDH1A1 (0.55) MAPTTDP1KDM4EPKMLMNA
SCHEMBL2109241 0.82 ALDH1A1 (0.55) MAPTTDP1KDM4EPKMLMNA
SCHEMBL971831 0.79 RAB9A (0.51) MAPTTDP1KDM4ELMNANPC1
SCHEMBL10612767 0.79 RAB9A (0.51) MAPTTDP1KDM4ELMNANPC1
SCHEMBL2474220 0.78 LMNA (0.61) MAPTTDP1KDM4EPKMLMNA
SCHEMBL2474219 0.78 LMNA (0.61) MAPTTDP1KDM4EPKMLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 EP disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 US disclosed
US-7297360-B2 Insulation film JSR CORPORATION (JP) 2007-11-20 US disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 EP disclosed
EP-1146092-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-03-08 EP disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed