SCHEMBL2483806

SCHEMBL2483806

CC(C)(C)[I+](OS(=O)(=O)C(F)(F)F)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.33
CA2 P00918 2/20 0.32
CA1 P00915 1/20 0.32
CA5A P35218 1/20 0.32
CA9 Q16790 1/20 0.32
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
DRD2 P14416 1/20 0.30
DRD1 P21728 1/20 0.30
DRD4 P21917 1/20 0.30
DRD5 P21918 1/20 0.30
DRD3 P35462 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2228757 0.85 CA2 (0.34) CA2CA1CA5ACA9
SCHEMBL11172344 0.84 CA2 (0.33) HSD11B1CA2CA1CA5ACA9
SCHEMBL36178 0.77 CA2 (0.36) CA2CA1CA5ACA9ALDH1A1
SCHEMBL1270050 0.73 HSD11B1 (0.39) HSD11B1CA2CA1CA5ACA9
SCHEMBL9421937 0.72 ALDH1A1 (0.31) ALDH1A1DRD2DRD1DRD4DRD5
SCHEMBL64775 0.71 PPARA (0.32)
SCHEMBL10504323 0.70 CA2 (0.32) CA2CA1CA5ACA9
SCHEMBL9421930 0.70 CA1 (0.32) CA2CA1CA5ACA9
SCHEMBL503265 0.70 PKM (0.34) HSD11B1CA2CA1CA5ACA9
SCHEMBL9421902 0.70 CA1 (0.32) CA2CA1CA5ACA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1653285-B1 Evaluation method of resist composition using immersion solvent TOKYO OHKA KOGYO CO LTD (JP) 2015-05-27 EP disclosed
US-8198004-B2 Resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-12 US disclosed
EP-1653284-B1 Evaluation method of resist composition based on sensitivity TOKYO OHKA KOGYO CO LTD (JP) 2011-11-02 EP disclosed
EP-1589375-B1 RESIST COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2011-10-19 EP disclosed
US-7541138-B2 Resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-02 US disclosed
US-20090130605-A1 RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-7527909-B2 Evaluation of suitability of a resist composition as a positive or negative resist composition used in a resist pattern formation method involving an immersion exposure step, which is resistant to the deleterious effects of the solvent used; excellent sensitivity and resist pattern profile TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-05 US disclosed
US-7501220-B2 Resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-10 US disclosed
US-7371510-B2 Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-05-13 US disclosed
US-7264918-B2 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2007-09-04 US disclosed
US-20070178394-A1 Evaluation of suitability of a resist composition as a positive or negative resist composition used in a resist pattern formation method involving an immersion exposure step, which is resistant to the deleterious effects of the solvent used; excellent sensitivity and resist pattern profile TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-02 US disclosed
US-20070134593-A1 Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern HIRAYAMA TAKU 2007-06-14 US disclosed
US-20060154170-A1 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2006-07-13 US disclosed
US-20060141400-A1 Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1653285-A2 Evaluation method of resist composition using immersion solvent TOKYO OHKA KOGYO CO., LTD. (JP) 2006-05-03 EP disclosed
EP-1653284-A2 Evaluation method of resist composition based on sensitivity TOKYO OHKA KOGYO CO., LTD. (JP) 2006-05-03 EP disclosed
EP-1610178-A1 RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN THEREWITH TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-28 EP disclosed
EP-1596251-A1 IMMERSION EXPOSURE PROCESS-USE RESIST PROTECTION FILM FORMING MATERIAL, COMPOSITE FILM, AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-11-16 EP disclosed
EP-1589375-A1 RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-26 EP disclosed
US-20050014090-A1 immersion lithography; sensitivity; using mixture of (meth0acrylate ester and acid generator TOKYO OHKA KOGYO CO., LTD. 2005-01-20 US disclosed