⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9014234 | 0.84 | — | — | |
| SCHEMBL18539516 | 0.70 | — | — | |
| SCHEMBL377532 | 0.67 | — | — | |
| SCHEMBL430721 | 0.67 | — | — | |
| SCHEMBL25220941 | 0.63 | — | — | |
| SCHEMBL49557 | 0.63 | — | — | |
| SCHEMBL2524116 | 0.60 | — | — | |
| SCHEMBL303170 | 0.60 | — | — | |
| SCHEMBL2099803 | 0.60 | — | — | |
| SCHEMBL11150558 | 0.60 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105632885-B | The forming method of semiconductor structure | 中芯国际集成电路制造(上海)有限公司 | 2019-01-22 | — | — | CN | claimed |
| CN-105632886-B | The forming method of semiconductor structure | 中芯国际集成电路制造(上海)有限公司 | 2018-08-10 | — | — | CN | claimed |
| CN-105632885-A | Forming method of semiconductor structure | SEMICONDUCTOR MFG INT CORP SHANGHAI | 2016-06-01 | — | — | CN | claimed |
| CN-105632886-A | Forming method of semiconductor structure | SEMICONDUCTOR MFG INT CORP SHANGHAI | 2016-06-01 | — | — | CN | claimed |
| CN-101587304-B | Pattern transferring method | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) | 2011-11-30 | — | — | CN | claimed |
| US-8039049-B2 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-10-18 | — | — | US | claimed |
| CN-101640170-A | Photoetching method capable of reducing width of exposure pattern | SEMICONDUCTOR MFG INT SHANGHAI | 2010-02-03 | — | — | CN | claimed |
| CN-101587304-A | Pattern transferring method | SEMICONDUCTOR MFG INT BEIJING (CN) | 2009-11-25 | — | — | CN | claimed |
| US-7405168-B2 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMITED (JP) | 2008-07-29 | — | — | US | claimed |
| US-20080076262-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2008-03-27 | — | — | US | claimed |
| CN-1272831-C | Fineness figure forming method | HAIRYOKSA SEMICONDUCTOR CO LTD (KR) | 2006-08-30 | — | — | CN | claimed |
| WO-2006039026-A1 | A METHOD FOR SUPERCRITICAL CARBON DIOXIDE PROCESSING OF FLUORO-CARBON FILMS | TOKYO ELECTRON LIMITED (JP) | 2006-04-13 | — | — | WO | claimed |
| US-20060068583-A1 | A METHOD FOR SUPERCRITICAL CARBON DIOXIDE PROCESSING OF FLUORO-CARBON FILMS | TOKYO ELECTRON LIMITED (JP) | 2006-03-30 | — | — | US | claimed |
| US-20050215072-A1 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2005-09-29 | — | — | US | claimed |
| US-6833326-B2 | Method for forming fine patterns in semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2004-12-21 | — | — | US | claimed |
| US-20030186547-A1 | Method for forming fine patterns in semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2003-10-02 | — | — | US | claimed |
| US-20020061461-A1 | Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same | HYNIX SEMICONDUCTOR INC. (KR) | 2002-05-23 | — | — | US | claimed |
| US-20020031721-A1 | Photoresist composition for top-surface imaging processes by silylation | HYNIX SEMICONDUCTOR INC. (KR) | 2002-03-14 | — | — | US | claimed |
| US-6319654-B1 | PREPARING A CHEMICAL AMPLIFICATION PHOTORESIST; COATING ON A SUBSTRATE OF A SEMICONDUCTOR ELEMENT TO FORM PHOTORESIST FILM; EXPOSING FILM TO LIGHT; SILYLATION; DEVELOPING TO FORM PATTERN; ETCHING SUBSTRATE | HYUNDAI ELECTRONICS INDUSTRIES (KR) | 2001-11-20 | — | — | US | claimed |
| US-6136661-A | Method to fabricate capacitor structures with very narrow features using silyated photoresist | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2000-10-24 | — | — | US | claimed |