SCHEMBL2529285

SCHEMBL2529285

C[Si](C)(C)O[Si](C)(CCCC#N)CCCC#N

nearest known ligand 0.39

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
ALDH1A1 P00352 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3889553 0.76 TSHR (0.42) TSHRALDH1A1TDP1
SCHEMBL18268161 0.73 TSHR (0.39) TSHRALDH1A1TDP1
SCHEMBL20637004 0.72 TSHR (0.48) TSHRALDH1A1TDP1
SCHEMBL5681540 0.72
SCHEMBL16724864 0.72 TSHR (0.48) TSHRALDH1A1TDP1
SCHEMBL30932190 0.71 ALDH1A1 (0.33) TSHRALDH1A1TDP1
SCHEMBL30932191 0.71 ALDH1A1 (0.33) TSHRALDH1A1TDP1
SCHEMBL1696215 0.70 ADRB2 (0.33) TSHR
SCHEMBL387611 0.70 TSHR (0.40) TSHRALDH1A1TDP1
SCHEMBL235280 0.70 TSHR (0.40) TSHRALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3186261-B1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC (US) 2020-11-18 EP claimed
US-10590150-B2 Preparation of fluorosilicon compounds ARKEMA INC. (US) 2020-03-17 US claimed
US-20180346492-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC (US) 2018-12-06 US claimed
US-20170275307-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC. 2017-09-28 US claimed
EP-3186261-A1 PREPARATION OF FLUOROSILICON COMPOUNDS Arkema, Inc. (US) 2017-07-05 EP claimed
WO-2016032767-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC. (US) 2016-03-03 WO claimed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
US-20040035791-A1 Formation of hydrophilic sites in partially silylated micelle templated silica UNIVERSITE LAVAL (CA) 2004-02-26 US claimed
WO-2002016267-A1 FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA UNIVERSITE LAVAL (CA) 2002-02-28 WO claimed
WO-2024242844-A2 HIGH PERFORMANCE SOLID-STATE ELECTROLYTE AND BATTERY BASED ON CYANOETHYLATED POLYMERS AND ADDITIVES AND MANUFACTURING METHOD THEREOF Nuvvon, Inc. (US) 2024-11-28 WO disclosed
US-20240387868-A1 High Performance Solid-State Electrolyte and Battery based on Cyanoethylated Polymers and Additives and Manufacturing Method Thereof Nuvvon, Inc. 2024-11-21 US disclosed
EP-3186261-B1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC (US) 2020-11-18 EP disclosed
US-10590150-B2 Preparation of fluorosilicon compounds ARKEMA INC. (US) 2020-03-17 US disclosed
US-20180346492-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC (US) 2018-12-06 US disclosed
US-20170275307-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC. 2017-09-28 US disclosed
EP-3186261-A1 PREPARATION OF FLUOROSILICON COMPOUNDS Arkema, Inc. (US) 2017-07-05 EP disclosed
EP-1782436-B1 METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE NOVINIUM INC (US) 2017-05-31 EP disclosed
WO-2016032767-A1 PREPARATION OF FLUOROSILICON COMPOUNDS ARKEMA INC. (US) 2016-03-03 WO disclosed
US-8656586-B2 Method for treating electrical cable at sustained elevated pressure NOVINIUM, INC. (US) 2014-02-25 US disclosed
EP-1744866-B1 METHOD FOR SELECTING FORMULATIONS TO TREAT ELECTRICAL CABLES NOVINIUM INC (US) 2012-08-08 EP disclosed
US-8205326-B2 Method for treating electrical cable at sustained elevated pressure NOVINIUM, INC. (US) 2012-06-26 US disclosed
US-20120102729-A1 METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE NOVINIUM, INC. (US) 2012-05-03 US disclosed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US disclosed
US-7901743-B2 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-03-08 US disclosed
US-20100095521-A1 METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE NOVINIUM, INC. (US) 2010-04-22 US disclosed
US-7615247-B2 Promoting transport of dielectric enhancing fluid into polymeric insulation; utilizing residual injection pressure to expand interstitial void volume along entire length of treatment segment NOVINIUM, INC. (US) 2009-11-10 US disclosed
US-7611748-B2 Method for selecting formulations to treat electrical cables NOVINIUM, INC. (US) 2009-11-03 US disclosed
EP-1882010-B1 METHOD FOR PRODUCING SILICONE MATERIALS CONTAINING HIGHLY DISPERSED FILLING MATERIALS WACKER CHEMIE AG (DE) 2009-01-14 EP disclosed
US-20080188614-A1 Process For Producing Silicone Compositions Comprising Finely Divided Fillers WACKER CHEMIE AG (DE) 2008-08-07 US disclosed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US disclosed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US disclosed
EP-1882010-A1 METHOD FOR PRODUCING SILICONE MATERIALS CONTAINING HIGHLY DISPERSED FILLING MATERIALS Wacker Chemie AG (DE) 2008-01-30 EP disclosed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US disclosed
WO-2006122706-A1 METHOD FOR PRODUCING SILICONE MATERIALS CONTAINING HIGHLY DISPERSED FILLING MATERIALS WACKER CHEMIE AG (DE) 2006-11-23 WO disclosed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO disclosed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US disclosed
US-20050192708-A1 Method for selecting formulations to treat electrical cables NOVINIUM, INC. (US) 2005-09-01 US disclosed
US-20050189130-A1 Method for treating electrical cable at sustained elevated pressure NOVINIUM, INC. (US) 2005-09-01 US disclosed
US-20040035791-A1 Formation of hydrophilic sites in partially silylated micelle templated silica UNIVERSITE LAVAL (CA) 2004-02-26 US disclosed
WO-2002016267-A1 FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA UNIVERSITE LAVAL (CA) 2002-02-28 WO disclosed
EP-1051461-A2 FUEL COMPOSITIONS EMPLOYING CATALYST COMBUSTION STRUCTURE ORR, William C. (US) 2000-11-15 EP disclosed
WO-1999066009-A2 FUEL COMPOSITIONS EMPLOYING CATALYST COMBUSTION STRUCTURE ORR WILLIAM C (US) 1999-12-23 WO disclosed
EP-0954558-A1 FUEL COMPOSITIONS EXHIBITING IMPROVED FUEL STABILITY ORR, William C. (US) 1999-11-10 EP disclosed
WO-1998026028-A1 FUEL COMPOSITIONS EXHIBITING IMPROVED FUEL STABILITY ORR WILLIAM C (US) 1998-06-18 WO disclosed
EP-0254556-B1 Semipermeable thin-film membranes comprising siloxane, alkoxysilyl and aryloxysilyl oligomers and copolymers BEND RES INC (US) 1994-11-17 EP disclosed
EP-0254556-A2 Semipermeable thin-film membranes comprising siloxane, alkoxysilyl and aryloxysilyl oligomers and copolymers BEND RESEARCH, INC. (US) 1988-01-27 EP disclosed
EP-0254556-A2 Semipermeable thin-film membranes comprising siloxane, alkoxysilyl and aryloxysilyl oligomers and copolymers BEND RESEARCH, INC. (US) 1988-01-27 EP disclosed