SCHEMBL253162

SCHEMBL253162

C=CCS(=O)(=O)NS(=O)(=O)CC=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL175854 1.00
SCHEMBL6266852 0.84 CA2 (0.33)
SCHEMBL313150 0.83 CYP3A4 (0.30)
SCHEMBL6310315 0.79
SCHEMBL756566 0.79
SCHEMBL8679501 0.78 FAAH (0.38)
SCHEMBL6465250 0.78 CA1 (0.36)
SCHEMBL756567 0.77
SCHEMBL2981480 0.77
SCHEMBL2048296 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 549 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240192601-A1 PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2024-06-13 US claimed
US-20210294212-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2021-09-23 US claimed
EP-1811339-B1 Pattern forming method FUJIFILM CORP (JP) 2021-03-17 EP claimed
EP-2756353-B1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORP (JP) 2019-05-01 EP claimed
US-9170489-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2015-10-27 US claimed
EP-2756353-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2014-07-23 EP claimed
US-20140193749-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-10 US claimed
WO-2013039243-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-21 WO claimed
US-7074544-B2 Image recording material FUJI PHOTO FILM CO., LTD. (JP) 2006-07-11 US claimed
US-20050142484-A1 Image recording material FUJI PHOTO FILM CO., LTD. 2005-06-30 US claimed
US-12044967-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-23 US disclosed
US-20240241444-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-18 US disclosed
US-12038689-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-16 US disclosed
US-12025919-B2 Method of storing photoresist coated substrates and semiconductor substrate container arrangement TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-07-02 US disclosed
US-20240210826-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2024-06-27 US disclosed
EP-1515186-A2 Positive resist composition and pattern formation method using the same Fuji Photo Film Co., Ltd. (JP) 2005-03-16 EP disclosed
US-20050048402-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. 2005-03-03 US disclosed
US-20040259028-A1 Positive resist composition and method of forming pattern using the same FUJI PHOTO FILM CO., LTD. 2004-12-23 US disclosed
EP-1489459-A1 Positive resist composition and method of forming pattern using the same Fuji Photo Film Co., Ltd. (JP) 2004-12-22 EP disclosed
US-20040185373-A1 Photosensitive composition FUJI PHOTO FILM CO., LTD. 2004-09-23 US disclosed