SCHEMBL2540328

SCHEMBL2540328

N#CC12C[C]3CC(CC(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL131063 0.73 GRIN2D (0.38)
SCHEMBL4041049 0.70
SCHEMBL14641099 0.69 PGR (0.32)
SCHEMBL2395911 0.69 GRIN2D (0.31)
SCHEMBL16804791 0.67
SCHEMBL22396329 0.67
SCHEMBL4436229 0.65
SCHEMBL3512411 0.65 GRIN2D (0.50)
SCHEMBL216451 0.65 PKM (0.37)
SCHEMBL5670500 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9348226-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2016-05-24 US disclosed
US-8597867-B2 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2013-12-03 US disclosed
US-20130045446-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN AND SULFONIUM COMPOUND JSR CORPORATION (JP) 2013-02-21 US disclosed
US-8043786-B2 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2011-10-25 US disclosed
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
EP-1652844-B1 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHINETSU CHEMICAL CO (JP) 2009-07-01 EP disclosed
EP-2075247-A1 Fluorinated monomer having cyclic structure, manufaturing method, polymer, photoresist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-01 EP disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7531289-B2 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-12 US disclosed
US-7531286-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-05-12 US disclosed
US-20050059787-A1 Synthesis of photoresist polymers SYMYX TECHNOLOGIES, INC. 2005-03-17 US disclosed
US-20050053861-A1 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-03-10 US disclosed
WO-2005003192-A1 SYNTHESIS OF PHOTORESIST POLYMERS SYMYX TECHNOLOGIES, INC. (US) 2005-01-13 WO disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
US-20050003303-A1 Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-06 US disclosed
WO-2005000924-A1 PHOTORESIST POLYMERS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
US-6677419-B1 REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-01-13 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed