SCHEMBL25420787

SCHEMBL25420787

Oc1c(F)cc(-c2c(F)c(O)c(O)c(F)c2F)c(O)c1F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5948429 0.83 IDO1 (0.33) —
SCHEMBL5949082 0.82 IDO1 (0.31) —
SCHEMBL25419456 0.81 TAAR1 (0.33) —
SCHEMBL25422771 0.81 CES2 (0.32) —
SCHEMBL25422263 0.80 CES2 (0.34) —
SCHEMBL29006499 0.80 IDO1 (0.30) —
SCHEMBL25419948 0.80 PTGES (0.31) —
SCHEMBL25422252 0.80 — —
SCHEMBL5948999 0.76 ERN1 (0.34) —
SCHEMBL5948787 0.76 IDO1 (0.33) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240122065-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN TOSOH CORPORATION (JP) 2024-04-11 — — US disclosed
EP-4198163-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN Tosoh Corporation (JP) 2023-06-21 — — EP disclosed
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