SCHEMBL25475321

SCHEMBL25475321

O=C(CS)OC1CCNCC1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CPN1 P15169 2/20 0.40
CPB2 Q96IY4 2/20 0.40
TSHR P16473 2/20 0.37
GABRA5 P31644 2/20 0.37
GABRB2 P47870 2/20 0.37
GABRP O00591 1/20 0.37
GABRD O14764 1/20 0.37
GABRA1 P14867 1/20 0.37
GABRB1 P18505 1/20 0.37
GABRG2 P18507 1/20 0.37
GABRB3 P28472 1/20 0.37
GABRA3 P34903 1/20 0.37
GABRA2 P47869 1/20 0.37
GABRA4 P48169 1/20 0.37
GABRE P78334 1/20 0.37
PMP22 Q01453 1/20 0.37
GABRA6 Q16445 1/20 0.37
GABRG1 Q8N1C3 1/20 0.37
GABRG3 Q99928 1/20 0.37
GABRQ Q9UN88 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL331246 0.84 TSHR (0.42) TSHRHSD17B10EPHX1NAAACYP2C19
SCHEMBL15921260 0.84
SCHEMBL25475215 0.84 NAAA (0.40) CPN1CPB2TSHRGABRA5GABRB2
SCHEMBL11377347 0.83 NAAA (0.44) CPN1CPB2TSHRGABRA5GABRB2
SCHEMBL27725063 0.81 CHRM3 (0.40) CPN1CPB2TSHRGABRA5GABRB2
SCHEMBL4679989 0.80 NAAA (0.50) TSHRHSD17B10EPHX1NAAACYP2C19
SCHEMBL30892123 0.79 GABRA5 (0.37) CPN1CPB2TSHRGABRA5GABRB2
SCHEMBL27564911 0.79 GABRA5 (0.37) CPN1CPB2TSHRGABRA5GABRB2
SCHEMBL5317009 0.79 NAAA (0.42) TSHRGABRA5GABRB2GABRPGABRD
SCHEMBL1405464 0.78 CYP2C19 (0.53) TSHRHSD17B10EPHX1NAAACYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed