SCHEMBL25476268

SCHEMBL25476268

BCc1c(CB)c(CB)c(C(=O)OCCS(=O)(=O)O)c(C(=O)OCC)c1CB

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 5/20 0.37
▸ HPGD P15428 4/20 0.37
▸ GAA P10253 4/20 0.37
▸ SMN1; SMN2 Q16637 3/20 0.37
▸ MAPT P10636 3/20 0.37
▸ CA1 P00915 2/20 0.37
▸ CA2 P00918 2/20 0.37
▸ CA12 O43570 1/20 0.37
▸ CA7 P43166 1/20 0.37
▸ CA9 Q16790 1/20 0.37
▸ CA14 Q9ULX7 1/20 0.37
▸ NR1H2 P55055 1/20 0.36
▸ NR1H3 Q13133 1/20 0.36
▸ KDM4E B2RXH2 1/20 0.36
▸ MAPK10 P53779 1/20 0.36
▸ NPSR1 Q6W5P4 1/20 0.36
▸ RXFP1 Q9HBX9 1/20 0.36
▸ PDE4D Q08499 1/20 0.35
▸ FHIT P49789 1/20 0.34
▸ ADORA3 P0DMS8 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25913789 0.93 SMN1; SMN2 (0.33) ALDH1A1HPGDGAASMN1; SMN2MAPT
SCHEMBL25737072 0.89 — —
SCHEMBL25476266 0.88 NPC1 (0.31) RAB9A
SCHEMBL25528042 0.88 SMN1; SMN2 (0.33) ALDH1A1HPGDGAASMN1; SMN2MAPT
SCHEMBL25476263 0.86 — —
SCHEMBL25913787 0.82 — —
SCHEMBL25913793 0.81 — —
SCHEMBL25476276 0.79 — —
SCHEMBL19756104 0.78 ALDH1A1 (0.39) ALDH1A1HPGDGAASMN1; SMN2MAPT
SCHEMBL25527951 0.78 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 — — US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 — — US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 — — US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720020-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720019-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720018-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 — — US disclosed
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-18 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 — — US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11720019-B2 Resist composition and pattern forming process SLC11A2, ABCC1, SFPQ ALDH1A1 2679/4885HPGD 4364/4885GAA 4179/4885
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM ALDH1A1 3639/4885HPGD 4024/4885GAA 4771/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 ALDH1A1 4741/4885HPGD 4006/4885GAA 3050/4885
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process NAF1, PFN1, COL1A1 ALDH1A1 640/4885HPGD 4066/4885GAA 3606/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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