SCHEMBL25564005

SCHEMBL25564005

CCC(C)(OC(C)=O)c1cc(F)cc(F)c1

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.37
CYP4A11 Q02928 1/20 0.37
RIPK1 Q13546 10/20 0.36
GAA P10253 1/20 0.34
SLC6A3 Q01959 1/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
KDM4E B2RXH2 1/20 0.32
ALOX5 P09917 2/20 0.32
DDR1 Q08345 1/20 0.31
CTSD P07339 1/20 0.31
BACE1 P56817 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25563997 0.83 KCNN4 (0.46) RIPK1CES2CES1
SCHEMBL25563998 0.82 KDM4E (0.41) RIPK1KDM4E
SCHEMBL25564035 0.82 CES2 (0.42) GAACES2KDM4EDDR1
SCHEMBL25564011 0.82 CYP4F2 (0.37) CYP4F2CYP4A11RIPK1GAASLC6A3
SCHEMBL25563988 0.79 CES2 (0.37) CYP4F2CYP4A11RIPK1GAASLC6A3
SCHEMBL25564007 0.78 RIPK1 (0.41) CYP4F2CYP4A11RIPK1SLC6A3CES2
Ammonia Solution, Strong SCHEMBL11492425 0.77 KDM4E (0.38) RIPK1KDM4E
SCHEMBL25564060 0.77 EPHX2 (0.35) DDR1
SCHEMBL5571854 0.76 CYP2C19 (0.48) RIPK1
SCHEMBL18408916 0.76 CYP2C19 (0.48) RIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed