SCHEMBL25567442

SCHEMBL25567442

CC(=O)OC1(c2ccc(OC(C(F)(F)F)C(F)(F)F)cc2)CCCCC1

nearest known ligand 0.36

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 7/20 0.36
SLC6A3 Q01959 6/20 0.36
SLC6A2 P23975 2/20 0.36
ADORA3 P0DMS8 1/20 0.34
DRD2 P14416 1/20 0.34
DRD4 P21917 1/20 0.34
DRD3 P35462 1/20 0.34
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
TSHR P16473 1/20 0.32
NPC1 O15118 1/20 0.31
POLB P06746 1/20 0.31
RAB9A P51151 1/20 0.31
PPARA Q07869 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25632868 0.99 SLC6A4 (0.35) SLC6A4SLC6A3SLC6A2ADORA3DRD2
SCHEMBL25564289 0.88 SLC6A4 (0.39) SLC6A4SLC6A3SLC6A2ADORA3DRD2
SCHEMBL25564216 0.87 LIPE (0.37) SLC6A4SLC6A3SLC6A2ADORA3DRD2
SCHEMBL25631063 0.85 SLC6A4 (0.50) SLC6A4DRD2DRD4DRD3MEN1
SCHEMBL25564215 0.83 SLC6A4 (0.48) SLC6A4DRD2DRD4DRD3MEN1
SCHEMBL25564249 0.82 SLC6A4 (0.51) SLC6A4SLC6A3SLC6A2ADORA3POLB
SCHEMBL25564148 0.81 SLC6A4 (0.49) SLC6A4SLC6A3SLC6A2ADORA3
SCHEMBL25564288 0.80 ADORA3 (0.40) SLC6A4SLC6A3SLC6A2ADORA3DRD2
SCHEMBL25564245 0.79 SLC6A3 (0.46) SLC6A4SLC6A3SLC6A2DRD2DRD4
SCHEMBL25564144 0.77 SLC6A3 (0.43) SLC6A4SLC6A3SLC6A2DRD2DRD4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed