SCHEMBL2581398

SCHEMBL2581398

C=C(C)C(=O)O[Si](Cl)(c1ccccc1)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.44
HPGD P15428 1/20 0.38
ALDH1A1 P00352 6/20 0.37
KDM4E B2RXH2 1/20 0.37
CES2 O00748 1/20 0.36
CES1 P23141 1/20 0.36
MAPT P10636 2/20 0.35
TDP1 Q9NUW8 2/20 0.33
POLB P06746 1/20 0.33
APEX1 P27695 1/20 0.33
HTT P42858 1/20 0.33
ATM Q13315 1/20 0.32
MTNR1A P48039 2/20 0.32
MTNR1B P49286 2/20 0.32
LMNA P02545 1/20 0.32
TSHR P16473 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
PAX8 Q06710 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2580852 0.85 ELANE (0.44) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL7055125 0.82 ALDH1A1 (0.44) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL28890772 0.81 ELANE (0.46) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL2184872 0.81 ELANE (0.46) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL1943281 0.81 ELANE (0.46) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL9411498 0.79 ELANE (0.45) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL8356581 0.79 ELANE (0.45) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL1719096 0.79 ELANE (0.45) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL2184733 0.76 ELANE (0.42) ELANEHPGDALDH1A1KDM4ECES2
SCHEMBL2579122 0.76 ELANE (0.42) ELANEHPGDALDH1A1KDM4ECES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
CN-101322074-B Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD 2013-01-23 CN disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
CN-101322074-A Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD (JP) 2008-12-10 CN disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed