SCHEMBL2579122

SCHEMBL2579122

C=C(C)C(=O)O[Si](OC)(OC)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.42
ALDH1A1 P00352 4/20 0.39
HPGD P15428 1/20 0.37
KDM4E B2RXH2 1/20 0.36
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
TSHR P16473 1/20 0.34
MAPT P10636 3/20 0.34
TDP1 Q9NUW8 2/20 0.32
POLB P06746 2/20 0.32
APEX1 P27695 1/20 0.32
HTT P42858 1/20 0.32
KCNN4 O15554 1/20 0.32
KMT2A Q03164 1/20 0.32
ATM Q13315 1/20 0.31
MTNR1A P48039 1/20 0.31
MTNR1B P49286 1/20 0.31
PAX8 Q06710 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28890772 0.91 ELANE (0.46) ELANEALDH1A1HPGDKDM4ECES2
Methacrylic Acid SCHEMBL19244721 0.85 HPGD (0.39) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL11135678 0.83 PAX8 (0.33) ALDH1A1HPGDCES2CES1MAPT
SCHEMBL1053507 0.83 CES2 (0.39) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL2578321 0.81 ALDH1A1 (0.41) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL2584690 0.81 ELANE (0.41) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL2184872 0.79 ELANE (0.46) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL1943281 0.79 ELANE (0.46) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL5702337 0.79 CES2 (0.39) ELANEALDH1A1HPGDKDM4ECES2
SCHEMBL9411498 0.78 ELANE (0.45) ELANEALDH1A1HPGDKDM4ECES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
CN-101322074-B Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD 2013-01-23 CN disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
CN-101322074-A Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD (JP) 2008-12-10 CN disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed