SCHEMBL26059374

SCHEMBL26059374

CC(=O)OC1(c2ccc(O)cc2)CCCC1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR2 Q92731 5/20 0.47
▸ ESR1 P03372 3/20 0.47
▸ DRD2 P14416 1/20 0.38
▸ DRD4 P21917 1/20 0.38
▸ DRD3 P35462 1/20 0.38
▸ PREP P48147 3/20 0.35
▸ CELA1 Q9UNI1 1/20 0.35
▸ TSHR P16473 3/20 0.33
▸ CA12 O43570 2/20 0.33
▸ CA1 P00915 2/20 0.33
▸ CA2 P00918 2/20 0.33
▸ CA7 P43166 2/20 0.33
▸ CA9 Q16790 2/20 0.33
▸ CA14 Q9ULX7 2/20 0.33
▸ MEN1 O00255 2/20 0.33
▸ KMT2A Q03164 2/20 0.33
▸ LMNA P02545 1/20 0.33
▸ HSD17B1 P14061 1/20 0.33
▸ MMP2 P08253 1/20 0.33
▸ MMP9 P14780 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26059382 0.98 ESR2 (0.48) ESR2ESR1DRD2DRD4DRD3
SCHEMBL25564130 0.84 DRD2 (0.50) DRD2DRD4DRD3ALDH1A1MAPT
SCHEMBL7915820 0.84 LMNA (0.40) ESR2ESR1DRD2DRD4DRD3
SCHEMBL23762899 0.84 AKR1C1 (0.48) DRD3MEN1KMT2A
SCHEMBL25698983 0.83 ESR2 (0.42) ESR2ESR1PREPCELA1TSHR
SCHEMBL25564307 0.83 DRD2 (0.49) DRD2DRD4DRD3ALDH1A1MAPT
SCHEMBL25564223 0.83 DRD2 (0.49) DRD2DRD4DRD3ALDH1A1MAPT
SCHEMBL25564309 0.83 DRD2 (0.49) DRD2DRD4DRD3ALDH1A1MAPT
SCHEMBL4105893 0.82 AKR1C1 (0.47) MEN1KMT2A
SCHEMBL27970983 0.81 ALDH1A1 (0.39) DRD2DRD4DRD3TSHRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230244142-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 — — US disclosed
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