SCHEMBL2606016

SCHEMBL2606016

O=C(OCc1ccc2ccc3ccccc3c2c1)C(F)(F)S(=O)(=O)O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 3/20 0.43
CYP2D6 P10635 3/20 0.43
CYP2C19 P33261 2/20 0.43
HIF1A Q16665 3/20 0.41
CYP3A4 P08684 1/20 0.41
CYP2C9 P11712 1/20 0.41
ALDH1A1 P00352 4/20 0.38
CYP1B1 Q16678 1/20 0.38
HSD17B10 Q99714 1/20 0.38
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
MAPT P10636 4/20 0.35
HPGD P15428 1/20 0.35
PTPN1 P18031 2/20 0.35
PTPRC P08575 1/20 0.35
GAA P10253 2/20 0.35
NPC1 O15118 1/20 0.35
XBP1 P17861 1/20 0.35
RAB9A P51151 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2605925 0.88 SLC1A3 (0.42) CYP1A2CA1CA2MAPTPTPN1
SCHEMBL2606015 0.87 RAB9A (0.39) CYP1A2CA1CA2MAPTPTPN1
SCHEMBL12128717 0.83 CYP1A2 (0.46) CYP1A2CYP2D6CYP2C19HIF1ACYP3A4
SCHEMBL2606019 0.81 ALDH1A1 (0.36) CYP1A2CYP2D6ALDH1A1MAPTHPGD
SCHEMBL2606014 0.80 EPHX1 (0.45) CYP1A2CYP2D6CYP2C19ALDH1A1HSD17B10
SCHEMBL2605927 0.80 EPHX1 (0.45) CYP1A2CA2TDP1AKR1B1TRPV1
SCHEMBL2605998 0.80 ALDH1A1 (0.40) CYP1A2ALDH1A1MAPTGAANPC1
SCHEMBL13181365 0.80 HSD17B1 (0.39) CA1CA2TRPV1
SCHEMBL107279 0.79 ALDH1A1 (0.49) ALDH1A1CA1CA2PTPN1PTPRC
SCHEMBL14009412 0.79 CYP1A2 (0.42) CYP1A2CYP2D6CYP2C19HIF1ACYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8158329-B2 Compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-17 US disclosed
US-8062830-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8062829-B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8057983-B2 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-15 US disclosed
US-8048612-B2 Polymer and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-01 US disclosed
US-8003296-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-23 US disclosed
US-7998656-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-16 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7572570-B2 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-11 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7527910-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-05-05 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed