SCHEMBL2607997

SCHEMBL2607997

CCC(C)(C)C(=O)OCCOC(=O)CCC(=O)OCCC(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
DGKA P23743 1/20 0.37
ADRA2A P08913 1/20 0.35
ADRA1A P35348 1/20 0.35
MAPT P10636 1/20 0.34
BLM P54132 1/20 0.34
CYP4F2 P78329 1/20 0.33
CYP4A11 Q02928 1/20 0.33
DNM1 Q05193 1/20 0.32
HTR2C P28335 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2607989 0.94 DGKA (0.33) DGKAADRA2AADRA1AMAPTBLM
SCHEMBL9239574 0.90 CYP4F2 (0.38) CYP4F2CYP4A11
SCHEMBL13557205 0.88 DGKA (0.45) DGKAADRA2AADRA1AMAPTBLM
SCHEMBL2607872 0.85 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL2608007 0.85 DGKA (0.33) DGKAADRA2AADRA1AMAPTBLM
SCHEMBL2607779 0.84 DGKA (0.33) DGKAADRA2AADRA1AMAPTBLM
SCHEMBL13755167 0.84 DGKA (0.33) DGKAADRA2AADRA1AMAPTBLM
SCHEMBL2608003 0.83 MGAM (0.34) CYP4F2CYP4A11
SCHEMBL10189205 0.82 DGKA (0.30) DGKA
SCHEMBL116886 0.81 DGKA (0.40) DGKAADRA2AADRA1AMAPTBLM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-15 US disclosed
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-02-08 US disclosed
US-20170166664-A1 METHOD FOR MANUFACTURING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-15 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9091915-B2 Resist composition, method of forming resist pattern, polymeric compound and method of producing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-28 US disclosed
US-20150147702-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2015-05-28 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8900795-B2 Resist composition, method of forming resist pattern and novel compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-02 US disclosed
US-8846838-B2 Fluorine-containing block copolymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-30 US disclosed
US-20120164581-A1 NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND SHO ABE (JP) 2012-06-28 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed
US-20110262864-A1 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-27 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, BRIX1, HAX1 DGKA 3542/4885ADRA2A 2269/4885ADRA1A 630/4885
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RPL21, RER1, RPS21 DGKA 2021/4885ADRA2A 2455/4885ADRA1A 1309/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.