SCHEMBL2608016

SCHEMBL2608016

CCC(C)(C)C(=O)Oc1ccc2cc(OCC(=O)OCC(C)(F)F)ccc2c1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.44
ELANE P08246 1/20 0.39
GAA P10253 5/20 0.38
KDM4E B2RXH2 3/20 0.38
HPGD P15428 3/20 0.38
MAPT P10636 3/20 0.38
HSD17B10 Q99714 2/20 0.38
MAPK1 P28482 2/20 0.38
TP53 P04637 1/20 0.38
GLA P06280 1/20 0.38
PDE3B Q13370 1/20 0.37
PDE3A Q14432 1/20 0.37
P2RY12 Q9H244 1/20 0.37
RAB9A P51151 1/20 0.37
PTPN7 P35236 1/20 0.36
NPSR1 Q6W5P4 2/20 0.36
LMNA P02545 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP3A4 P08684 1/20 0.35
CYP2C9 P11712 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14649824 0.93 ALDH1A1 (0.46) ALDH1A1ELANEGAAKDM4EHPGD
SCHEMBL12212725 0.91 ALDH1A1 (0.42) ALDH1A1ELANEGAAKDM4EHPGD
SCHEMBL2608021 0.90 ELANE (0.45) ALDH1A1ELANEGAAKDM4EHPGD
SCHEMBL2608024 0.86 ALDH1A1 (0.41) ALDH1A1GAAKDM4EHPGDMAPT
SCHEMBL18959958 0.85 ALDH1A1 (0.41) ALDH1A1ELANEGAAKDM4EHPGD
SCHEMBL14787716 0.84 ALDH1A1 (0.43) ALDH1A1ELANEGAAMAPTLMNA
SCHEMBL14732660 0.83 ALDH1A1 (0.46) ALDH1A1GAAKDM4EHPGDMAPT
SCHEMBL14649818 0.83 ELANE (0.42) ALDH1A1ELANEGAARAB9ANPSR1
SCHEMBL2608015 0.82 ALDH1A1 (0.43) ALDH1A1GAAKDM4EHPGDMAPT
SCHEMBL2608030 0.82 ALDH1A1 (0.45) ALDH1A1GAAKDM4EHPGDMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-15 US disclosed
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-02-08 US disclosed
US-20170166664-A1 METHOD FOR MANUFACTURING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-15 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9091915-B2 Resist composition, method of forming resist pattern, polymeric compound and method of producing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-28 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8900795-B2 Resist composition, method of forming resist pattern and novel compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-02 US disclosed
US-8846838-B2 Fluorine-containing block copolymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-30 US disclosed
US-8790868-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-29 US disclosed
US-20120164581-A1 NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND SHO ABE (JP) 2012-06-28 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed
US-20110262864-A1 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-27 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, BRIX1, HAX1 ALDH1A1 1390/4885ELANE 1179/4885GAA 3083/4885
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RPL21, RER1, RPS21 ALDH1A1 1377/4885ELANE 1144/4885GAA 2959/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.