Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | MDH1 | P40925 | 1/20 | 0.42 |
| ▸ | MDH2 | P40926 | 1/20 | 0.42 |
| ▸ | HRH3 | Q9Y5N1 | 10/20 | 0.40 |
| ▸ | NPC1 | O15118 | 2/20 | 0.40 |
| ▸ | RAB9A | P51151 | 2/20 | 0.40 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14732667 | 0.90 | MAPT (0.44) | MAPTSMN1; SMN2MDH1MDH2POLB | |
| SCHEMBL2608036 | 0.89 | AKR1C3 (0.39) | MAPTSMN1; SMN2NPC1RAB9APOLB | |
| SCHEMBL12212736 | 0.88 | SMN1; SMN2 (0.43) | MAPTSMN1; SMN2MDH1MDH2HRH3 | |
| SCHEMBL16590991 | 0.83 | MAPT (0.45) | MAPTSMN1; SMN2HRH3ALDH1A1 | |
| SCHEMBL2608025 | 0.82 | MAPT (0.42) | MAPTSMN1; SMN2POLBALDH1A1 | |
| SCHEMBL2608040 | 0.80 | ALDH1A1 (0.61) | MAPTSMN1; SMN2NPC1RAB9APOLB | |
| SCHEMBL14732668 | 0.80 | ALDH1A1 (0.47) | MAPTSMN1; SMN2HRH3NPC1RAB9A | |
| SCHEMBL14649828 | 0.79 | ALDH1A1 (0.46) | MAPTSMN1; SMN2MDH1MDH2RAB9A | |
| SCHEMBL16591049 | 0.79 | SMN1; SMN2 (0.42) | MAPTSMN1; SMN2HRH3NPC1RAB9A | |
| SCHEMBL2608033 | 0.78 | SMN1; SMN2 (0.44) | MAPTSMN1; SMN2MDH1MDH2HRH3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180210338-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-07-26 | — | — | US | disclosed |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-8980524-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8790868-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8771921-B2 | Negative resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8632960-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8530598-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-20120164581-A1 | NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | SHO ABE (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120116038-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN | TAKESHITA MASARU (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120094236-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | SHIONO DAIJU (JP) | 2012-04-19 | — | — | US | disclosed |
| US-20120077125-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110262864-A1 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-20110236824-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110117491-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110117499-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110111343-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-12 | — | — | US | disclosed |
| US-20110008728-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RER1, BRIX1, HAX1 | MAPT 4199/4885SMN1; SMN2 1709/4885MDH1 4773/4885 |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RPL21, RER1, RPS21 | MAPT 4388/4885SMN1; SMN2 1020/4885MDH1 4279/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.