Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 9/20 | 0.42 |
| ▸ | F9 | P00740 | 1/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.39 |
| ▸ | CASP3 | P42574 | 1/20 | 0.39 |
| ▸ | CASP7 | P55210 | 1/20 | 0.39 |
| ▸ | CASP9 | P55211 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | MEN1 | O00255 | 2/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | POLB | P06746 | 1/20 | 0.35 |
| ▸ | JAK2 | O60674 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14732654 | 0.92 | KDM4E (0.41) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL12212735 | 0.91 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL2608012 | 0.83 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL14732655 | 0.81 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL2608018 | 0.80 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL2608032 | 0.80 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL14649819 | 0.80 | POLB (0.43) | KDM4ENPC1CASP3CASP7CASP9 | |
| SCHEMBL13558160 | 0.77 | KDM4E (0.36) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL12235021 | 0.77 | KDM4E (0.36) | KDM4EF9NPC1CASP3CASP7 | |
| SCHEMBL14649815 | 0.76 | KDM4E (0.40) | KDM4EF9NPC1CASP3CASP7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180210338-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-07-26 | — | — | US | disclosed |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-8980524-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8790868-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8771921-B2 | Negative resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8632960-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8530598-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-20120164581-A1 | NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | SHO ABE (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120116038-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN | TAKESHITA MASARU (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120094236-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | SHIONO DAIJU (JP) | 2012-04-19 | — | — | US | disclosed |
| US-20120077125-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110262864-A1 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-20110236824-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110117499-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110117491-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110111343-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-12 | — | — | US | disclosed |
| US-20110008728-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RER1, BRIX1, HAX1 | KDM4E 3543/4885F9 560/4885NPC1 1802/4885 |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RPL21, RER1, RPS21 | KDM4E 3941/4885F9 95/4885NPC1 2968/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.