SCHEMBL2608018

SCHEMBL2608018

CCC(C)C(=O)Oc1cccc2c(OCC(=O)OCC(C)(F)F)cccc12

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 9/20 0.40
NPC1 O15118 1/20 0.37
CASP3 P42574 1/20 0.37
CASP7 P55210 1/20 0.37
CASP9 P55211 1/20 0.37
PTPN1 P18031 1/20 0.36
F9 P00740 1/20 0.36
TSHR P16473 1/20 0.35
ALDH1A1 P00352 1/20 0.34
HPGD P15428 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
USP2 O75604 1/20 0.34
MEN1 O00255 1/20 0.33
POLB P06746 1/20 0.33
KMT2A Q03164 1/20 0.33
JAK2 O60674 1/20 0.33
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11987558 0.90 KDM4E (0.39) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL2608032 0.84 KDM4E (0.40) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL2608012 0.83 KDM4E (0.40) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL14732655 0.83 KDM4E (0.40) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL12325145 0.81 KDM4E (0.36) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL2608034 0.80 KDM4E (0.42) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL15447050 0.80 KMT2A (0.42) KDM4ETSHRALDH1A1USP2MEN1
SCHEMBL2608020 0.80 GAA (0.41) NPC1PTPN1TSHRALDH1A1MAPT
SCHEMBL14732654 0.79 KDM4E (0.41) KDM4ENPC1CASP3CASP7CASP9
SCHEMBL14984008 0.77 ALDH1A1 (0.42) PTPN1ALDH1A1TDP1MEN1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-15 US disclosed
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-02-08 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8846838-B2 Fluorine-containing block copolymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-30 US disclosed
US-8790868-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-29 US disclosed
US-8771921-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-08 US disclosed
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-20120328982-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120276481-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-01 US disclosed
US-8252509-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-28 US disclosed
US-20120164581-A1 NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND SHO ABE (JP) 2012-06-28 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, BRIX1, HAX1 KDM4E 3543/4885NPC1 1802/4885CASP3 4245/4885
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RPL21, RER1, RPS21 KDM4E 3941/4885NPC1 2968/4885CASP3 3122/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.