SCHEMBL2608035

SCHEMBL2608035

CCC(C)c1ccc(OCC(=O)OCC(C)(F)F)cc1

nearest known ligand 0.59

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.59
TSHR P16473 1/20 0.59
MEN1 O00255 1/20 0.48
KMT2A Q03164 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
NPC1 O15118 2/20 0.46
RAB9A P51151 2/20 0.46
MAPT P10636 1/20 0.45
L3MBTL1 Q9Y468 2/20 0.44
HSP90AA1 P07900 1/20 0.44
POLB P06746 1/20 0.42
GAA P10253 1/20 0.42
NPSR1 Q6W5P4 1/20 0.42
SMN1; SMN2 Q16637 2/20 0.41
TP53 P04637 1/20 0.41
LMNA P02545 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2608031 0.89 ALDH1A1 (0.47) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL11987555 0.88 ALDH1A1 (0.58) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL14732656 0.88 ALDH1A1 (0.43) ALDH1A1TSHRNPC1RAB9AL3MBTL1
SCHEMBL19844759 0.84 ALDH1A1 (0.53) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL10282672 0.83 ALDH1A1 (0.69) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL2608020 0.83 GAA (0.41) ALDH1A1TSHRNPC1RAB9AMAPT
SCHEMBL16591100 0.81 ALDH1A1 (0.66) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL111936 0.81 ALDH1A1 (0.66) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL14732658 0.80 CYP17A1 (0.44) ALDH1A1TSHRRAB9AMAPTGAA
SCHEMBL12212758 0.80 CYP17A1 (0.53) ALDH1A1TSHRMEN1KMT2ATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-15 US disclosed
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-02-08 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8790868-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-29 US disclosed
US-8771921-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-08 US disclosed
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-8450044-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-28 US disclosed
US-8404428-B2 Positive resist composition, method of forming resist pattern using the same, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-26 US disclosed
US-20120276481-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-01 US disclosed
US-8252509-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-28 US disclosed
US-20120164581-A1 NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND SHO ABE (JP) 2012-06-28 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, BRIX1, HAX1 ALDH1A1 1390/4885TSHR 2554/4885MEN1 1359/4885
US-20180072651-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RPL21, RER1, RPS21 ALDH1A1 1377/4885TSHR 3574/4885MEN1 3049/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.