Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | AKR1C3 | P42330 | 5/20 | 0.48 |
| ▸ | AKR1C2 | P52895 | 5/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.48 |
| ▸ | TSHR | P16473 | 1/20 | 0.48 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.44 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.44 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.44 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.40 |
| ▸ | AKR1C1 | Q04828 | 1/20 | 0.40 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | PTPRC | P08575 | 1/20 | 0.39 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.39 |
| ▸ | PTPN11 | Q06124 | 1/20 | 0.39 |
| ▸ | PTPN13 | Q12923 | 1/20 | 0.39 |
| ▸ | PTPN22 | Q9Y2R2 | 1/20 | 0.39 |
| ▸ | TP53 | P04637 | 1/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10175854 | 0.91 | AKR1C3 (0.48) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL2608040 | 0.89 | ALDH1A1 (0.61) | ALDH1A1TSHRTDP1L3MBTL1TP53 | |
| SCHEMBL12212758 | 0.83 | CYP17A1 (0.53) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL2608031 | 0.82 | ALDH1A1 (0.47) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL14119015 | 0.81 | ALDH1A1 (0.51) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL10175766 | 0.81 | ALDH1A1 (0.46) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL11987554 | 0.81 | ALDH1A1 (0.46) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 | |
| SCHEMBL14732668 | 0.81 | ALDH1A1 (0.47) | ALDH1A1TSHRSMN1; SMN2NPC1RAB9A | |
| SCHEMBL2608036 | 0.80 | AKR1C3 (0.39) | AKR1C3AKR1C2ALDH1A1CYP17A1CYP2C9 | |
| SCHEMBL17853797 | 0.80 | ALDH1A1 (0.44) | AKR1C3AKR1C2ALDH1A1TSHRCYP17A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180210338-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-07-26 | — | — | US | disclosed |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-8980524-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8846838-B2 | Fluorine-containing block copolymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8790868-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8771921-B2 | Negative resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-8475997-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-20130053518-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20120276481-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-8252509-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-20120164581-A1 | NEGATIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | SHO ABE (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120094236-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | SHIONO DAIJU (JP) | 2012-04-19 | — | — | US | disclosed |
| US-20120077125-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110236824-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110117499-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110117491-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110111343-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180037534-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RER1, BRIX1, HAX1 | AKR1C3 1909/4885AKR1C2 2083/4885ALDH1A1 1390/4885 |
| US-20180072651-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RPL21, RER1, RPS21 | AKR1C3 455/4885AKR1C2 632/4885ALDH1A1 1377/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.