⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12369826 | 0.75 | — | — | |
| SCHEMBL10181708 | 0.74 | LMNA (0.35) | — | |
| SCHEMBL106970 | 0.63 | ADRA2C (0.35) | — | |
| SCHEMBL20278694 | 0.63 | ADRA2C (0.35) | — | |
| SCHEMBL12628428 | 0.62 | ELANE (0.30) | — | |
| SCHEMBL18671412 | 0.61 | — | — | |
| SCHEMBL14838766 | 0.61 | — | — | |
| SCHEMBL110450 | 0.61 | ALDH1A1 (0.39) | — | |
| SCHEMBL22895257 | 0.61 | ALDH1A1 (0.39) | — | |
| SCHEMBL4397378 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9316912-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-20150205205-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORP (JP) | 2015-07-23 | — | — | US | disclosed |
| US-9023576-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8828643-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2014-09-09 | — | — | US | disclosed |
| US-7425404-B2 | Chemical amplification resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2008-09-16 | — | — | US | disclosed |
| US-7371505-B2 | Photosensitive composition and method for forming pattern using the same | FUJIFILM CORPORATION (JP) | 2008-05-13 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7326516-B2 | Resist composition for immersion exposure and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-02-05 | — | — | US | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |