SCHEMBL26386366

SCHEMBL26386366

O=C(OCc1ccc([N+](=O)[O-])cc1)N(C1CCCCC1)C1CCCCC1

nearest known ligand 0.51

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 3/20 0.48
MEN1 O00255 2/20 0.48
KMT2A Q03164 2/20 0.48
ALDH1A1 P00352 6/20 0.47
SMN1; SMN2 Q16637 2/20 0.47
POLB P06746 1/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
HTT P42858 1/20 0.46
RAB9A P51151 1/20 0.46
IDO1 P14902 1/20 0.45
CASP6 P55212 1/20 0.45
ENPP2 Q13822 1/20 0.45
AKR1C3 P42330 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1205029 0.83 CCR5 (0.50) ENPP2
SCHEMBL21872794 0.80 ENPP2 (0.60) EPHX1MEN1KMT2AALDH1A1L3MBTL1
SCHEMBL24497087 0.79 KMT2A (0.64) EPHX1MEN1KMT2AALDH1A1POLB
SCHEMBL2199000 0.77 EPHX1 (0.72) EPHX1MEN1KMT2AALDH1A1POLB
SCHEMBL26386361 0.77 KMT2A (0.42) MEN1KMT2AALDH1A1SMN1; SMN2POLB
SCHEMBL13543078 0.77 CCR5 (0.46)
SCHEMBL567201 0.76 ALDH1A1 (0.51) MEN1KMT2AALDH1A1SMN1; SMN2POLB
SCHEMBL13684200 0.76 ALDH1A1 (0.54) ALDH1A1SMN1; SMN2POLBL3MBTL1HTT
SCHEMBL6141087 0.76 TDP1 (0.59) MEN1KMT2AALDH1A1POLBL3MBTL1
SCHEMBL31095809 0.75 ALDH1A1 (0.46) MEN1KMT2AALDH1A1SMN1; SMN2HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384679-A1 PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-30 US disclosed
US-20230375924-A1 EUV Metallic Resist Performance Enhancement Via Additives TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-23 US disclosed
US-20230367216-A1 BOTTOM ANTIREFLECTIVE COATING MATERIALS TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-16 US disclosed
US-11796918-B2 Underlayer material for photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-10-24 US disclosed
US-11782345-B2 Bottom antireflective coating materials TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-10-10 US disclosed