Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2675023 | 0.90 | MAPT (0.32) | KDM4EHSD17B10 | |
| SCHEMBL3161105 | 0.90 | — | — | |
| SCHEMBL3158525 | 0.90 | — | — | |
| SCHEMBL2674958 | 0.88 | KDM4E (0.33) | MEN1KMT2AKDM4EALDH1A1HSD17B10 | |
| SCHEMBL13719642 | 0.88 | KCNJ11 (0.32) | — | |
| SCHEMBL2675037 | 0.86 | MLNR (0.32) | — | |
| SCHEMBL5357152 | 0.86 | HTR2A (0.32) | — | |
| SCHEMBL6566234 | 0.85 | BCHE (0.31) | — | |
| SCHEMBL2675556 | 0.85 | NOD2 (0.33) | — | |
| SCHEMBL647028 | 0.84 | HTR2A (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| EP-2579304-A1 | INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS | JSR Corporation (JP) | 2013-04-10 | — | — | EP | disclosed |
| US-20130084394-A1 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL | JSR CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-8173348-B2 | Method of forming pattern and composition for forming of organic thin-film for use therein | JSR CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20100233635-A1 | METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN | JSR CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100178620-A1 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | ADAM9, MUS81, ADAM17 | MEN1 1487/4885KMT2A 364/4885ATM 749/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.