SCHEMBL2680865

SCHEMBL2680865

CCCCCCOC(=O)C(C)(CC)C(F)(F)F

nearest known ligand 0.47

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.47
CES2 O00748 1/20 0.46
EPHX1 P07099 1/20 0.44
TSHR P16473 3/20 0.43
CES1 P23141 1/20 0.42
HCAR2 Q8TDS4 1/20 0.41
RAD52 P43351 1/20 0.41
NPSR1 Q6W5P4 1/20 0.41
FAAH O00519 1/20 0.40
ALDH1A1 P00352 1/20 0.40
LMNA P02545 1/20 0.40
ACHE P22303 6/20 0.40
HTR2C P28335 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2680863 1.00 NAAA (0.47) NAAACES2EPHX1TSHRCES1
SCHEMBL2680747 0.98 NAAA (0.44) NAAACES2EPHX1TSHRCES1
SCHEMBL2680750 0.93 ALDH1A1 (0.45) NAAACES2EPHX1TSHRHCAR2
SCHEMBL2681600 0.85 HCAR2 (0.34) CES2TSHRHCAR2ALDH1A1LMNA
SCHEMBL13799360 0.84 CYP4F2 (0.39) ALDH1A1ACHE
SCHEMBL2681540 0.82 NAAA (0.50) NAAACES2EPHX1TSHRHCAR2
SCHEMBL2681692 0.82 NAAA (0.50) NAAACES2EPHX1TSHRHCAR2
SCHEMBL14198951 0.82 NAAA (0.53) NAAACES2EPHX1TSHRCES1
SCHEMBL29155799 0.82 NAAA (0.53) NAAACES2EPHX1TSHRCES1
SCHEMBL2690881 0.80 NAAA (0.52) NAAACES2EPHX1TSHRCES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-20120009522-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed