SCHEMBL2680747

SCHEMBL2680747

CCCCCOC(=O)C(C)(CC)C(F)(F)F

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.44
CES2 O00748 1/20 0.43
EPHX1 P07099 1/20 0.42
TSHR P16473 4/20 0.41
HCAR2 Q8TDS4 2/20 0.40
CES1 P23141 1/20 0.40
ALDH1A1 P00352 2/20 0.39
TP53 P04637 1/20 0.39
CYP3A4 P08684 1/20 0.39
MAPK1 P28482 1/20 0.39
RAD52 P43351 1/20 0.39
NPSR1 Q6W5P4 1/20 0.39
FAAH O00519 2/20 0.38
LMNA P02545 1/20 0.38
ATM Q13315 1/20 0.37
CA12 O43570 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CA9 Q16790 1/20 0.37
ACHE P22303 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2680865 0.98 NAAA (0.47) NAAACES2EPHX1TSHRHCAR2
SCHEMBL2680863 0.98 NAAA (0.47) NAAACES2EPHX1TSHRHCAR2
SCHEMBL2680750 0.95 ALDH1A1 (0.45) NAAACES2EPHX1TSHRHCAR2
SCHEMBL2681600 0.87 HCAR2 (0.34) CES2TSHRHCAR2ALDH1A1LMNA
SCHEMBL13799360 0.86 CYP4F2 (0.39) ALDH1A1ACHE
SCHEMBL2681697 0.81 NAAA (0.47) NAAACES2EPHX1TSHRHCAR2
SCHEMBL9973346 0.81 ALOX15 (0.32)
SCHEMBL9938029 0.81 NAAA (0.50) NAAACES2EPHX1TSHRHCAR2
SCHEMBL17773370 0.80
SCHEMBL2681540 0.80 NAAA (0.50) NAAACES2EPHX1TSHRHCAR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090286182-A1 RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090280434-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-12 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed