Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | CES2 | O00748 | 1/20 | 0.32 |
| ▸ | ESR1 | P03372 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.32 |
| ▸ | KDR | P35968 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.30 |
| ▸ | GRM1 | Q13255 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2680750 | 0.89 | ALDH1A1 (0.45) | HCAR2ALDH1A1LMNACES2ESR1 | |
| SCHEMBL2680747 | 0.87 | NAAA (0.44) | HCAR2ALDH1A1LMNACES2TSHR | |
| SCHEMBL2680865 | 0.85 | NAAA (0.47) | HCAR2ALDH1A1LMNACES2TSHR | |
| SCHEMBL2680863 | 0.85 | NAAA (0.47) | HCAR2ALDH1A1LMNACES2TSHR | |
| SCHEMBL3408327 | 0.83 | CYP4F2 (0.40) | ALDH1A1LMNATSHR | |
| SCHEMBL13799360 | 0.83 | CYP4F2 (0.39) | ALDH1A1 | |
| SCHEMBL17773371 | 0.83 | FFAR3 (0.32) | ALDH1A1 | |
| SCHEMBL3410070 | 0.82 | CA1 (0.35) | ALDH1A1LMNATDP1 | |
| SCHEMBL14803921 | 0.82 | — | — | |
| SCHEMBL13641996 | 0.80 | CHRM2 (0.50) | LMNACHRM1TSHRRAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9482945-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-01 | — | — | US | disclosed |
| US-20160103393-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-04-14 | — | — | US | disclosed |
| US-9158198-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-10-13 | — | — | US | disclosed |
| EP-1795962-B1 | Positive resist composition and pattern for forming method using the same | FUJIFILM CORP (JP) | 2014-02-12 | — | — | EP | disclosed |
| US-8632938-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8632938-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2014-01-21 | — | — | US | disclosed |
| US-20120249995-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-8158330-B2 | Resist protective coating composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-17 | — | — | US | disclosed |
| US-8101335-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7771912-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7642034-B2 | Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-20090286182-A1 | RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-20090280434-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-12 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070134589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070134589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| EP-1795962-A2 | Positive resist composition and pattern for forming method using the same | Fujifilm Corporation (JP) | 2007-06-13 | — | — | EP | disclosed |
| US-20070122736-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-31 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |