SCHEMBL2681909

SCHEMBL2681909

CCCCC1CCC(OC(=O)C2CC3CC2C(C)C3C)CC1

nearest known ligand 0.41

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 3/20 0.41
CYP1A2 P05177 2/20 0.36
LMNA P02545 1/20 0.35
MAPK1 P28482 1/20 0.35
HTT P42858 1/20 0.35
MAPT P10636 2/20 0.35
POLB P06746 1/20 0.33
HPGD P15428 1/20 0.33
CYP2D6 P10635 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
PKM P14618 1/20 0.30
GAA P10253 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2681397 0.80 EPHX1 (0.35) NAAAHTTCYP2C19
SCHEMBL2681392 0.79 EPHX1 (0.38) NAAAHTTCYP2C19
SCHEMBL12939414 0.76
SCHEMBL9876188 0.74 NAAA (0.50) NAAACYP1A2LMNAMAPK1HTT
SCHEMBL9876191 0.74 NAAA (0.50) NAAACYP1A2LMNAMAPK1HTT
SCHEMBL18186694 0.74 CYP1A2 (0.52) NAAACYP1A2LMNAMAPK1HTT
SCHEMBL2680868 0.74 ALDH1A1 (0.39) NAAACYP1A2LMNAMAPK1POLB
SCHEMBL11403256 0.74 NAAA (0.47) NAAACYP1A2LMNAMAPK1HTT
SCHEMBL2681827 0.73 PPM1B (0.36)
SCHEMBL30211062 0.73 NAAA (0.51) NAAACYP1A2LMNAMAPK1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed