SCHEMBL2701708

SCHEMBL2701708

CCCOC(C)Cc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 6/20 0.48
TAAR1 Q96RJ0 4/20 0.48
SLC6A2 P23975 3/20 0.48
SLC6A4 P31645 2/20 0.48
SLC6A3 Q01959 2/20 0.48
MAOA P21397 1/20 0.48
CYP2A6 P11509 1/20 0.48
ADORA2A P29274 1/20 0.48
ADORA1 P30542 1/20 0.48
TRPA1 O75762 2/20 0.46
SLC18A2 Q05940 1/20 0.45
CYP2D6 P10635 1/20 0.45
EPHX1 P07099 1/20 0.41
ADRA2B P18089 1/20 0.41
ADRA2C P18825 1/20 0.41
HTR2A P28223 1/20 0.41
ADRA1A P35348 1/20 0.41
OPRK1 P41145 1/20 0.41
KCNH2 Q12809 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL28004213 0.93 NPC1 (0.47) SIGMAR1TRPA1
SCHEMBL23554980 0.86 TRPA1 (0.52) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL16287104 0.85 SIGMAR1 (0.46) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL14118700 0.83 SIGMAR1 (0.48) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL2700588 0.83 SIGMAR1 (0.52) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL1839615 0.82 SLC6A2 (0.50) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL19725380 0.82 TRPA1 (0.50) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL19762341 0.82 TRPA1 (0.50) SIGMAR1TAAR1SLC6A2SLC6A4SLC6A3
Bicarbonate SCHEMBL28004686 0.82 CTSK (0.49)
SCHEMBL8155375 0.82 SIGMAR1 (0.52) SIGMAR1MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 US disclosed
EP-2447773-B1 Method for producing a pattern, method for producing a MEMS structure, use of a cured film of a photosensitive composition as a sacrificial layer or as a component of a MEMS structure FUJIFILM CORP (JP) 2013-07-10 EP disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20120107563-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN, MEMS STRUCTURE, METHOD FOR PRODUCING THE STRUCTURE, METHOD FOR DRY ETCHING, METHOD FOR WET ETCHING, MEMS SHUTTER DEVICE, AND IMAGE DISPLAY APPARATUS FUJIFILM CORPORATION (JP) 2012-05-03 US disclosed
EP-2447773-A1 Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus Fujifilm Corporation (JP) 2012-05-02 EP disclosed