SCHEMBL2735484

SCHEMBL2735484

CCC(C)(C)C(=O)OCc1c2ccccc2cc2ccccc12

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.47
RIPK1 Q13546 1/20 0.41
TACR1 P25103 1/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
HTR2A P28223 1/20 0.39
NPC1 O15118 1/20 0.38
ALDH1A1 P00352 4/20 0.38
KDM4E B2RXH2 4/20 0.38
MEN1 O00255 3/20 0.38
HPGD P15428 3/20 0.38
KMT2A Q03164 3/20 0.38
GLA P06280 2/20 0.38
TDP1 Q9NUW8 1/20 0.38
CYP1A2 P05177 1/20 0.38
CYP2C19 P33261 1/20 0.38
HSD17B10 Q99714 1/20 0.38
POLB P06746 1/20 0.37
GPR35 Q9HC97 1/20 0.37
MAPT P10636 1/20 0.36
EDNRA P25101 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20609465 0.88 EPHX1 (0.47) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL7263293 0.86 EPHX1 (0.50) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL14863734 0.85 EPHX1 (0.49) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL15356651 0.85 EPHX1 (0.44) EPHX1TACR1NPC1ALDH1A1KDM4E
SCHEMBL12128718 0.84 EPHX1 (0.48) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL13814122 0.84 EPHX1 (0.48) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL13592565 0.82 EPHX1 (0.38) EPHX1RIPK1TACR1L3MBTL1HTR2A
SCHEMBL13292523 0.82 MTNR1A (0.42) EPHX1RIPK1ALDH1A1KDM4EMEN1
SCHEMBL15356656 0.81 EPHX1 (0.42) EPHX1TACR1L3MBTL1HTR2ANPC1
SCHEMBL25473178 0.81 EPHX1 (0.46) EPHX1TACR1L3MBTL1HTR2ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240219834-A1 METHOD FOR FORMING A RESIST PATTERN NISSAN CHEMICAL CORPORATION (JP) 2024-07-04 US disclosed
US-20240219834-A1 METHOD FOR FORMING A RESIST PATTERN NISSAN CHEMICAL CORPORATION (JP) 2024-07-04 US disclosed
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-11675269-B2 Composition for forming resist overlayer film for EUV lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-06-13 US disclosed
US-20230131253-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION WITH SUPPRESSED DEGENERATION OF CROSSLINKING AGENT NISSAN CHEMICAL CORPORATION (JP) 2023-04-27 US disclosed
US-20180081274-A1 CATIONICALLY POLYMERIZABLE RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-03-22 US disclosed
US-9805943-B2 Polymer for resist under layer film composition, resist under layer film composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-31 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-9465290-B2 Near-infrared absorbing film compositions GLOBALFOUNDRIES INC. (KY) 2016-10-11 US disclosed
US-20160284559-A1 POLYMER FOR RESIST UNDER LAYER FILM COMPOSITION, RESIST UNDER LAYER FILM COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-29 US disclosed
US-20090311624-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-17 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-20090280435-A1 Antireflective coating composition MERCK PATENT GMBH (DE) 2009-11-12 US disclosed
US-20090253076-A1 Coating-type underlayer coating forming composition for lithography containing vinylnaphthalene resin derivative NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-10-08 US disclosed
US-7425399-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-09-16 US disclosed
US-20080206680-A1 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-08-28 US disclosed
US-20080138744-A1 Anti-Reflective Coating Forming Composition Containing Vinyl Ether Compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-06-12 US disclosed
US-20080102649-A1 Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-05-01 US disclosed
US-20070238029-A1 Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 US disclosed
US-7226721-B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 EPHX1 267/4885RIPK1 4116/4885TACR1 685/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.