SCHEMBL2740903

SCHEMBL2740903

CCCN1CCN2CCCN=C12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 2/20 0.42
CYP3A4 P08684 1/20 0.42
CYP2C19 P33261 1/20 0.42
CYP1A2 P05177 1/20 0.37
TSHR P16473 3/20 0.36
HTT P42858 1/20 0.36
ALDH1A1 P00352 2/20 0.35
LMNA P02545 3/20 0.34
POLB P06746 1/20 0.34
KDM2B Q8NHM5 1/20 0.34
USP2 O75604 1/20 0.33
INMT O95050 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
PDE4A P27815 2/20 0.31
PDE4B Q07343 2/20 0.31
PDE4C Q08493 2/20 0.31
PDE4D Q08499 2/20 0.31
DRD2 P14416 1/20 0.30
SIGMAR1 Q99720 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL251940 0.93 CYP2D6 (0.42) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL9984629 0.91 CYP2D6 (0.41) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL15038763 0.89 LMNA (0.39) CYP2D6CYP3A4CYP2C19TSHRALDH1A1
SCHEMBL30893105 0.83 LMNA (0.38) CYP2D6CYP3A4CYP2C19TSHRLMNA
SCHEMBL252415 0.82 CYP2D6 (0.44) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL8368647 0.81 ALDH1A1 (0.45) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL250783 0.80 ALDH1A1 (0.47) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL17217520 0.80 ALDH1A1 (0.47) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL31066868 0.80 ALDH1A1 (0.47) CYP2D6CYP3A4CYP2C19CYP1A2TSHR
SCHEMBL253401 0.80 ALDH1A1 (0.47) CYP2D6CYP3A4CYP2C19CYP1A2TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180011406-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-01-11 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20140272692-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2014-09-18 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 US disclosed
WO-2013147325-A1 PATTERN FORMING METHOD, METHOD FOR SELECTING HEATING TEMPERATURE IN PATTERN FORMING METHOD, EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-10-03 WO disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed