SCHEMBL2742129

SCHEMBL2742129

O=C(COC(=O)C12CC3CC(CC(C3)C1)C2)NS(=O)(=O)C(F)(F)F

nearest known ligand 0.57

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 12/20 0.57
▸ MAPT P10636 5/20 0.57
▸ KMT2A Q03164 3/20 0.57
▸ NPSR1 Q6W5P4 3/20 0.57
▸ MEN1 O00255 2/20 0.57
▸ RECQL P46063 1/20 0.46
▸ POLB P06746 3/20 0.44
▸ MAPK1 P28482 2/20 0.44
▸ GAA P10253 2/20 0.44
▸ SMN1; SMN2 Q16637 1/20 0.44
▸ TSHR P16473 1/20 0.44
▸ LMNA P02545 2/20 0.44
▸ KDM4E B2RXH2 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24360935 0.89 ALDH1A1 (0.46) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL24360924 0.83 ALDH1A1 (0.42) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL22503110 0.81 LMNA (0.39) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL19796149 0.80 ALDH1A1 (0.46) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL22503063 0.78 ALDH1A1 (0.34) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL9893796 0.78 ALDH1A1 (0.43) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL9924177 0.76 ALDH1A1 (0.42) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL2742128 0.76 ALDH1A1 (0.43) ALDH1A1KMT2ANPSR1MEN1POLB
SCHEMBL24361795 0.75 ALDH1A1 (0.35) ALDH1A1MAPTKMT2ANPSR1MEN1
SCHEMBL4384818 0.75 ALDH1A1 (0.53) ALDH1A1KMT2ANPSR1MEN1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-28 — — US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 — — US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 — — US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110318691-A1 RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 — — US disclosed
US-20110318691-A1 RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS CACNA1F, SLC6A5, IDUA ALDH1A1 3860/4885MAPT 2279/4885KMT2A 2537/4885
US-20110318691-A1 RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME RIF1, MSI2, SLIRP ALDH1A1 4155/4885MAPT 1980/4885KMT2A 774/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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