SCHEMBL9893796

SCHEMBL9893796

O=C(OCCNS(=O)(=O)C(F)(F)F)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 11/20 0.43
KMT2A Q03164 3/20 0.43
NPSR1 Q6W5P4 3/20 0.43
MAPT P10636 2/20 0.43
MEN1 O00255 2/20 0.43
PRKCA P17252 1/20 0.40
RECQL P46063 1/20 0.38
CYP17A1 P05093 2/20 0.38
CYP19A1 P11511 2/20 0.38
SMN1; SMN2 Q16637 1/20 0.37
TSHR P16473 1/20 0.37
PKM P14618 1/20 0.36
ATM Q13315 1/20 0.35
GAA P10253 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9924177 0.92 ALDH1A1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL9925523 0.90 EPHX1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL9946445 0.90 EPHX1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL19261615 0.90 EPHX1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL9894463 0.87 RECQL (0.44) ALDH1A1KMT2ANPSR1MAPTRECQL
SCHEMBL19796149 0.86 ALDH1A1 (0.46) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL26489441 0.84 NPSR1 (0.42) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL26489429 0.83 NPSR1 (0.44) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL9924198 0.81 EPHX2 (0.48) ALDH1A1KMT2ANPSR1MAPTMEN1
SCHEMBL10264011 0.78 ALDH1A1 (0.39) ALDH1A1KMT2ANPSR1MAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
US-20240337928-A1 ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST PATTERN SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-10-10 US disclosed
US-20240201588-A1 ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-06-20 US disclosed
US-20230375924-A1 EUV Metallic Resist Performance Enhancement Via Additives TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-23 US disclosed
US-20230375924-A1 EUV Metallic Resist Performance Enhancement Via Additives TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-11-23 US disclosed
US-20230268178-A1 PROTECTIVE COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-08-24 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230131429-A1 PHOTO-DECOMPOSABLE COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-04-27 US disclosed
US-20230131429-A1 PHOTO-DECOMPOSABLE COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-04-27 US disclosed
US-20120264058-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-18 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-20120164578-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-20120164578-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120149916-A1 NOVEL COMPOUND CENTRAL GLASS CO., LTD. (JP) 2012-06-14 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120149916-A1 NOVEL COMPOUND CENTRAL GLASS CO., LTD. (JP) 2012-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240201588-A1 ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME OR10J3, RER1, S100A11 ALDH1A1 1564/4885KMT2A 1532/4885NPSR1 1182/4885
US-20120149916-A1 NOVEL COMPOUND MRPL11, ABCB7, MRPL21 ALDH1A1 1340/4885KMT2A 3079/4885NPSR1 3069/4885
US-20230131429-A1 PHOTO-DECOMPOSABLE COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE C9, ERCC1, SMARCC2 ALDH1A1 3796/4885KMT2A 2675/4885NPSR1 4385/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.