SCHEMBL2742215

SCHEMBL2742215

C=C(C)C(=O)NCCCCOC(=O)c1ccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)c2ccccc12

nearest known ligand 0.32

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
SLC2A1 P11166 3/20 0.32
TSHR P16473 2/20 0.31
TP53 P04637 1/20 0.31
CYP3A4 P08684 1/20 0.31
MAPK1 P28482 1/20 0.31
ALDH1A1 P00352 2/20 0.31
LMNA P02545 1/20 0.31
KDM4E B2RXH2 2/20 0.30
KDM4A O75164 1/20 0.30
KDM4C Q9H3R0 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18499585 0.95 SCARB1 (0.32) SLC2A1
SCHEMBL16638148 0.85 RIPK1 (0.34) SLC2A1TSHRTP53CYP3A4MAPK1
SCHEMBL9963665 0.81 STS (0.43) TSHRCYP3A4MAPK1LMNA
SCHEMBL10204317 0.79 HPGDS (0.36) SLC2A1CYP3A4ALDH1A1
SCHEMBL2883302 0.78
SCHEMBL2742204 0.77 TSHR (0.32) TSHRTP53CYP3A4MAPK1ALDH1A1
SCHEMBL18499591 0.76
SCHEMBL15450682 0.74 CDC25B (0.40)
SCHEMBL16638144 0.73 TSHR (0.34) TSHRTP53CYP3A4MAPK1ALDH1A1
SCHEMBL2742195 0.73 TDP1 (0.36) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 US disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed