SCHEMBL2742285

SCHEMBL2742285

COCN1C(=O)N(COC)C(C)C1C

nearest known ligand 0.32

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.32
MEN1 O00255 1/20 0.30
PABPC1 P11940 1/20 0.30
KMT2A Q03164 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12667575 0.87 MEN1 (0.39) MEN1PABPC1KMT2A
SCHEMBL12418939 0.86 L3MBTL1 (0.33) L3MBTL1
SCHEMBL75394 0.82 L3MBTL1 (0.43) L3MBTL1LMNA
SCHEMBL16359990 0.79
SCHEMBL36462 0.78 L3MBTL1 (0.35) L3MBTL1
SCHEMBL36050 0.78 L3MBTL1 (0.31) L3MBTL1
SCHEMBL5527137 0.76 L3MBTL1 (0.30) L3MBTL1
SCHEMBL19959610 0.76 L3MBTL1 (0.36) L3MBTL1
SCHEMBL10056666 0.75 L3MBTL1 (0.57) L3MBTL1LMNA
SCHEMBL17813442 0.75 L3MBTL1 (0.57) L3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9625813-B2 Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound FUJIFILM CORPORATION (JP) 2017-04-18 US disclosed
WO-2016120944-A1 ADHESION LAYER-FORMING COMPOSITION, METHOD OF MANUFACTURING CURED PRODUCT PATTERN, METHOD OF MANUFACTURING OPTICAL COMPONENT, METHOD OF MANUFACTURING CIRCUIT BOARD, METHOD OF MANUFACTURING IMPRINTING MOLD, AND DEVICE COMPONENT CANON KABUSHIKI KAISHA (JP) 2016-08-04 WO disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2015-11-26 US disclosed
US-9152047-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom, method of forming pattern, process for manufacturing semiconductor device, semiconductor device and compound FUJIFILM CORPORATION (JP) 2015-10-06 US disclosed
US-9069246-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method and resist film using the composition, and electronic device manufacturing method and electronic device using these FUJIFILM CORPORATION (JP) 2015-06-30 US disclosed
US-8962233-B2 Actinic-ray—or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-02-24 US disclosed
US-8940471-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed
US-8900791-B2 Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern with the composition FUJIFILM CORPORATION (JP) 2014-12-02 US disclosed
US-20140349223-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND COMPOUND FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-20120214091-A1 RESIST FILM, RESIST COATED MASK BLANKS AND METHOD OF FORMING RESIST PATTERN USING THE RESIST FILM, AND CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-23 US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110318691-A1 RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110189609-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-08-04 US disclosed
US-20110171577-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN WITH THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-14 US disclosed
US-20110076615-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-20100297851-A1 COMPOSITIONS AND METHODS FOR MULTIPLE EXPOSURE PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2010-11-25 US disclosed
US-20100297851-A1 COMPOSITIONS AND METHODS FOR MULTIPLE EXPOSURE PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2010-11-25 US disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed
US-20090181224-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2009-07-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN AFF1, MACF1, RER1 L3MBTL1 2772/4885MEN1 435/4885PABPC1 3613/4885
US-20110318691-A1 RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME RIF1, MSI2, SLIRP L3MBTL1 4158/4885MEN1 737/4885PABPC1 552/4885
US-20110171577-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN WITH THE COMPOSITION ARSA, RAD51, ARID2 L3MBTL1 3707/4885MEN1 2393/4885PABPC1 2635/4885
US-20110189609-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION ARSA, RER1, TERB1 L3MBTL1 2284/4885MEN1 4204/4885PABPC1 1830/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.