SCHEMBL2754977

SCHEMBL2754977

CCC(C)(C)C(=O)OC1CC2CC1CC2C#N

nearest known ligand 0.34

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
▸ DPP4 P27487 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21164018 0.87 DPP4 (0.30) DPP4
SCHEMBL14295511 0.84 — —
SCHEMBL15113774 0.80 CHRM2 (0.34) —
SCHEMBL13823373 0.80 — —
SCHEMBL13640710 0.79 CYP3A4 (0.35) —
SCHEMBL2754857 0.79 HMGCR (0.33) —
SCHEMBL10182024 0.78 — —
SCHEMBL12109914 0.78 HMGCR (0.33) —
SCHEMBL15726651 0.77 — —
SCHEMBL12616825 0.77 HMGCR (0.32) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 — — US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 — — US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 — — US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 — — US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 — — US disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 — — US disclosed
US-20160349620-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2016-12-01 — — US disclosed
US-20160349620-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2016-12-01 — — US disclosed
US-20160342083-A1 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-24 — — US disclosed
US-20160342083-A1 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-24 — — US disclosed
US-20120015301-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-19 — — US disclosed
US-20120003591-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003591-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110229832-A1 PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-09-22 — — US disclosed
US-7998654-B2 Positive resist composition and pattern-forming method FUJIFILM CORPORATION (JP) 2011-08-16 — — US disclosed
US-7998654-B2 Positive resist composition and pattern-forming method FUJIFILM CORPORATION (JP) 2011-08-16 — — US disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 — — WO disclosed
WO-2010114176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-10-07 — — WO disclosed
US-20080248425-A1 Adjust solubility of alkali developer using acid; acid generator; actinic radiation FUJIFILM CORPORATION (JP) 2008-10-09 — — US disclosed
US-20080248425-A1 Adjust solubility of alkali developer using acid; acid generator; actinic radiation FUJIFILM CORPORATION (JP) 2008-10-09 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110229832-A1 PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD RER1, RARA, RARG DPP4 4547/4885
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 DPP4 4804/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

Send feedback